5秒后页面跳转
PHPT61006NY PDF预览

PHPT61006NY

更新时间: 2024-11-07 11:14:55
品牌 Logo 应用领域
安世 - NEXPERIA 开关晶体管
页数 文件大小 规格书
15页 712K
描述
100 V, 6 A NPN high power bipolar transistorProduction

PHPT61006NY 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP-8, 4 PINReach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.72
外壳连接:COLLECTOR最大集电极电流 (IC):6 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):140JEDEC-95代码:MO-235
JESD-30 代码:R-PSSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN参考标准:AEC-Q101; IEC-60134
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):170 MHzBase Number Matches:1

PHPT61006NY 数据手册

 浏览型号PHPT61006NY的Datasheet PDF文件第2页浏览型号PHPT61006NY的Datasheet PDF文件第3页浏览型号PHPT61006NY的Datasheet PDF文件第4页浏览型号PHPT61006NY的Datasheet PDF文件第5页浏览型号PHPT61006NY的Datasheet PDF文件第6页浏览型号PHPT61006NY的Datasheet PDF文件第7页 
PHPT61006NY  
100 V, 6 A NPN high power bipolar transistor  
26 January 2015  
Product data sheet  
1. General description  
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted  
Device (SMD) power plastic package.  
PNP complement: PHPT61006PY  
2. Features and benefits  
High thermal power dissipation capability  
High temperature applications up to 175 °C  
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK  
High energy efficiency due to less heat generation  
AEC-Q101 qualified.  
3. Applications  
Power management  
Load switch  
Linear mode voltage regulator  
Backlighting applications  
Motor drive  
Relay replacement  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
100  
V
IC  
collector current  
-
-
-
-
6
A
ICM  
peak collector current single pulse; tp ≤ 1 ms  
-
12  
57  
A
RCEsat  
collector-emitter  
IC = 6 A; IB = 600 mA; tp ≤ 300 µs;  
δ ≤ 0.02; Tamb = 25 °C; pulsed  
35  
mΩ  
saturation resistance  
 
 
 
 

与PHPT61006NY相关器件

型号 品牌 获取价格 描述 数据表
PHPT61006PY NXP

获取价格

POWER TRANSISTOR
PHPT61006PY NEXPERIA

获取价格

100 V, 6 A PNP high power bipolar transistorProduction
PHPT61010NY NEXPERIA

获取价格

100 V, 10 A NPN high power bipolar transistorProduction
PHPT61010PY NEXPERIA

获取价格

100 V, 10 A PNP high power bipolar transistorProduction
P-HQFP144-2020-0.50-001 TOSHIBA

获取价格

HQFP144
P-HQFP144-2020-0.50-003 TOSHIBA

获取价格

HQFP144
PHR VISHAY

获取价格

ESCC 4001/023 Qualified High Precision (5 ppm, 0.01 %), Thin Film Chip Resistors
PHR-10 ETC

获取价格

Disconnectable Crimp style connectors
PHR-10 JST

获取价格

PH连接器,高箱型,封装高度17.0mm,厚度4.5mm。
PHR-11 ETC

获取价格

Disconnectable Crimp style connectors