Datasheet > PHPT610035NK

PHPT610035NK

更新时间： 2024-11-07 11:13:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	275K
描述
NPN/NPN high power double bipolar transistorProduction

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PHPT610035NK 数据手册

PHPT610035NK

NPN/NPN high power double bipolar transistor

10 September 2020

Product data sheet

1. General description

NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted

Device (SMD) power plastic package. Matched version of PHPT610030NK.

PNP/PNP complement: PHPT610035PK

NPN/PNP complement: PHPT610035NPK

2. Features and benefits

•

Current gain matching 5%

•

High thermal power dissipation capability

Suitable for high temperature applications up to 175 °C

Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

High energy efficiency due to less heat generation

AEC-Q101 qualified

3. Applications

•

Current mirror

Motor control

Power management

Backlighting applications

Relay replacement

differential amplifiers

4. Quick reference data

Table 1. Quick reference data

Symbol

Per transistor

V_CBO

Parameter

Conditions

Min

Typ

Max

Unit

collector-base voltage open emitter

collector current

100

I_C

R_CEsat

collector-emitter

saturation resistance

I_C= 3 A; I_B= 300 mA; t_p≤ 300 µs;

pulsed; δ ≤ 0.02; T_amb= 25 °C

110

mΩ

12 3 4 5 6 7...14

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