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PHPT60603PY PDF预览

PHPT60603PY

更新时间: 2024-11-02 20:01:47
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
15页 305K
描述
TRANSISTOR POWER TRANSISTOR, BIP General Purpose Power

PHPT60603PY 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknown风险等级:5.72
Base Number Matches:1

PHPT60603PY 数据手册

 浏览型号PHPT60603PY的Datasheet PDF文件第2页浏览型号PHPT60603PY的Datasheet PDF文件第3页浏览型号PHPT60603PY的Datasheet PDF文件第4页浏览型号PHPT60603PY的Datasheet PDF文件第5页浏览型号PHPT60603PY的Datasheet PDF文件第6页浏览型号PHPT60603PY的Datasheet PDF文件第7页 
6
5
K
PHPT60603PY  
60 V, 3 A PNP high power bipolar transistor  
A
P
F
L
13 January 2014  
Product data sheet  
1. General description  
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device  
(SMD) power plastic package.  
NPN complement: PHPT60603NY.  
2. Features and benefits  
High thermal power dissipation capability  
Suitable for high temperature applications up to 175 °C  
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK  
High energy efficiency due to less heat generation  
AEC-Q101 qualified  
3. Applications  
Power management  
Load switch  
Linear mode voltage regulator  
Backlighting applications  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-60  
V
IC  
collector current  
-
-
-
-
-3  
A
ICM  
peak collector current tp ≤ 1 ms; pulsed  
-
-8  
A
RCEsat  
collector-emitter  
IC = -3 A; IB = -300 mA; pulsed;  
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C  
80  
120  
mΩ  
saturation resistance  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

PHPT60603PY 替代型号

型号 品牌 替代类型 描述 数据表
PHPT60603PYX NXP

完全替代

PHPT60603PY - 60 V, 3 A PNP high power bipolar transistor SOIC 4-Pin

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