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PHPT61002PYCLH PDF预览

PHPT61002PYCLH

更新时间: 2024-11-07 11:13:51
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
15页 255K
描述
100 V, 2 A PNP high power bipolar transistorProduction

PHPT61002PYCLH 数据手册

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PHPT61002PYCLH  
100 V, 2 A PNP high power bipolar transistor  
13 July 2017  
Product data sheet  
1. General description  
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power  
plastic package.  
NPN complement: PHPT61002NYCLH.  
2. Features and benefits  
High thermal power dissipation capability  
Suitable for high temperature applications up to 175 °C  
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK  
High energy efficiency due to less heat generation  
3. Applications  
Power management  
Load switch  
Linear mode voltage regulator  
Backlighting applications  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-100  
V
IC  
collector current  
-
-
-
-
-2  
A
ICM  
peak collector current single pulse; tp ≤ 1 ms  
-
-5  
A
RCEsat  
collector-emitter  
IC = -2 A; IB = -200 mA; Tamb = 25 °C  
[1]  
150  
250  
mΩ  
saturation resistance  
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02  
 
 
 
 
 

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