Datasheet > PHPT61002PYCLH

PHPT61002PYCLH

更新时间： 2024-11-03 11:13:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	255K
描述
100 V, 2 A PNP high power bipolar transistorProduction

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PHPT61002PYCLH 数据手册

PHPT61002PYCLH

100 V, 2 A PNP high power bipolar transistor

13 July 2017

Product data sheet

1. General description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power

plastic package.

NPN complement: PHPT61002NYCLH.

2. Features and benefits

•

High thermal power dissipation capability

•

Suitable for high temperature applications up to 175 °C

Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

High energy efficiency due to less heat generation

3. Applications

•

Power management

Load switch

Linear mode voltage regulator

Backlighting applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-100

I_C

collector current

-2

I_CM

peak collector current single pulse; t_p≤ 1 ms

-5

R_CEsat

collector-emitter

I_C= -2 A; I_B= -200 mA; T_amb= 25 °C

[1]

150

250

mΩ

saturation resistance

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02

12 3 4 5 6 7...15

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