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PHPT610030NK PDF预览

PHPT610030NK

更新时间: 2024-11-03 11:14:51
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
14页 275K
描述
NPN/NPN high power double bipolar transistorProduction

PHPT610030NK 数据手册

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PHPT610030NK  
NPN/NPN high power double bipolar transistor  
10 September 2020  
Product data sheet  
1. General description  
NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted  
Device (SMD) power plastic package.  
PNP/PNP complement: PHPT610030PK  
NPN/PNP complement: PHPT610030NPK  
2. Features and benefits  
High thermal power dissipation capability  
Suitable for high temperature applications up to 175 °C  
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK  
High energy efficiency due to less heat generation  
AEC-Q101 qualified  
3. Applications  
Motor control  
Power management  
Load switch  
Linear mode voltage regulator  
Backlighting applications  
Relay replacement  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO  
collector-emitter  
voltage  
open base  
-
-
100  
V
IC  
collector current  
-
-
-
3
A
RCEsat  
collector-emitter  
saturation resistance  
IC = 3 A; IB = 0.3 A; tp ≤ 300 µs; pulsed;  
δ ≤ 0.02; Tamb = 25 °C  
75  
110  
mΩ  
 
 
 
 

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