Datasheet > PHPT610030NK

PHPT610030NK

更新时间： 2024-11-07 11:14:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	275K
描述
NPN/NPN high power double bipolar transistorProduction

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PHPT610030NK 数据手册

PHPT610030NK

NPN/NPN high power double bipolar transistor

10 September 2020

Product data sheet

1. General description

NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted

Device (SMD) power plastic package.

PNP/PNP complement: PHPT610030PK

NPN/PNP complement: PHPT610030NPK

2. Features and benefits

•

High thermal power dissipation capability

•

Suitable for high temperature applications up to 175 °C

Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

High energy efficiency due to less heat generation

AEC-Q101 qualified

3. Applications

•

Motor control

Power management

Load switch

Linear mode voltage regulator

Backlighting applications

Relay replacement

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

100

I_C

collector current

R_CEsat

collector-emitter

saturation resistance

I_C= 3 A; I_B= 0.3 A; t_p≤ 300 µs; pulsed;

δ ≤ 0.02; T_amb= 25 °C

110

mΩ

12 3 4 5 6 7...14

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