Datasheet > PHPT60610NY

PHPT60610NY

更新时间： 2024-11-02 12:57:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	251K
描述
NPN

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PHPT60610NY 数据手册

PHPT60610NY

60 V, 10 A NPN high power bipolar transistor

27 May 2015

Product data sheet

1. General description

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted

Device (SMD) power plastic package.

PNP complement: PHPT60610PY

2. Features and benefits

High thermal power dissipation capability

High temperature applications up to 175 °C

Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK

High energy efficiency due to less heat generation

AEC-Q101 qualified.

•

3. Applications

Power management

Load switch

Linear mode voltage regulator

Backlighting applications

Motor drive

•

Relay replacement

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

I_C= 10 A; I_B= 1 A; pulsed; t_p≤ 300 µs;

δ ≤ 0.02 ; T_amb= 25 °C

mΩ

saturation resistance

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