Datasheet > PHPT60610PY

PHPT60610PY

更新时间： 2024-11-02 20:39:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	242K
描述
POWER TRANSISTOR

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技术参数
数据手册

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PHPT60610PY 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

PHPT60610PY 数据手册

PHPT60610PY

60 V, 10 A PNP high power bipolar transistor

27 May 2015

Product data sheet

1. General description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted

Device (SMD) power plastic package.

NPN complement: PHPT60610NY

2. Features and benefits

High thermal power dissipation capability

High temperature applications up to 175 °C

Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK

High energy efficiency due to less heat generation

AEC-Q101 qualified.

•

3. Applications

Power management

Load switch

Linear mode voltage regulator

Backlighting applications

Motor drive

•

Relay replacement

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-60

I_C

collector current

-10

-20

I_CM

peak collector current t_p≤ 1 ms; pulsed

R_CEsat

collector-emitter

I_C= -10 A; I_B= -1 A; t_p≤ 300 µs;

δ ≤ 0.02; T_amb= 25 °C; pulsed

mΩ

saturation resistance

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