Datasheet > PHPT61002NYC

PHPT61002NYC

更新时间： 2024-11-03 11:13:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	712K
描述
100V, 2 A NPN high power bipolar transistorProduction

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PHPT61002NYC 数据手册

PHPT61002NYC

100V, 2 A NPN high power bipolar transistor

9 January 2014

Product data sheet

1. General description

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device

(SMD) power plastic package.

PNP complement: PHPT61002PYC

2. Features and benefits

High thermal power dissipation capability

High temperature applications up to 175 °C

Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK

High energy efficiency due to less heat generation

•

3. Applications

Load switch

•

Power management

Linear mode voltage regulator

Backlighting apllications

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

100

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

I_C= 2 A; I_B= 200 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

150

mΩ

saturation resistance

12 3 4 5 6 7...15

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