Datasheet > PHPT60606NY

PHPT60606NY

更新时间： 2024-11-06 21:22:19

品牌	Logo	应用领域
恩智浦 - NXP		开关晶体管
页数	文件大小	规格书
16页	239K
描述
POWER TRANSISTOR

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技术参数
数据手册

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PHPT60606NY 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

PHPT60606NY 数据手册

PHPT60606NY

60 V, 6 A NPN high power bipolar transistor

8 December 2014

Product data sheet

1. General description

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device

(SMD) power plastic package.

PNP complement: PHPT60606PY

2. Features and benefits

High thermal power dissipation capability

High temperature applications up to 175 °C

Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK

High energy efficiency due to less heat generation

AEC-Q101 qualified.

•

3. Applications

Power management

Load switch

Linear mode voltage regulator

Backlighting applications

Relay replacement

Motor drive

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

I_CM

peak collector current single pulse; t_p≤ 1 ms

R_CEsat

collector-emitter

I_C= 6 A; I_B= 600 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02; T_amb= 25 °C

mΩ

saturation resistance

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