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NTTFS4985NF

更新时间： 2024-11-18 12:04:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 126K
描述
Power MOSFET 30 V, 64 A, Single N−Channel, WDFN8

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NTTFS4985NF 数据手册

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NTTFS4985NF  
Power MOSFET  
30 V, 64 A, Single N−Channel, WDFN8  
Features  
• Integrated Schottky Diode  
• Low R  
to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
DS(on)  
http://onsemi.com  
• Optimized Gate Charge to Minimize Switching Losses  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
3.5 mW @ 10 V  
5.2 mW @ 4.5 V  
30 V  
64 A  
Applications  
• CPU Power Delivery  
• Synchronous Rectification for DC−DC Converters  
• Low Side Switching  
N−Channel MOSFET  
D
• Telecom Secondary Side Rectification  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
V
30  
20  
V
V
A
DSS  
G
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
I
D
T = 25°C  
22  
A
S
Current R  
(Note 1)  
q
JA  
T = 85°C  
A
15.9  
2.69  
Power Dissipation R  
(Note 1)  
T = 25°C  
A
P
W
A
MARKING DIAGRAM  
q
D
JA  
1
1
S
S
S
G
D
D
D
D
Continuous Drain  
I
D
T = 25°C  
A
32.4  
23.4  
5.85  
4985  
AYWWG  
G
WDFN8  
(m8FL)  
Current R  
(Note 1)  
≤ 10 s  
q
JA  
T = 85°C  
A
CASE 511AB  
Power Dissipation  
≤ 10 s (Note 1)  
T = 25°C  
A
P
I
W
A
D
D
D
R
Steady  
State  
q
JA  
4985  
A
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Continuous Drain  
Current R (Note 2)  
T = 25°C  
A
16.3  
11.7  
1.47  
D
q
JA  
T = 85°C  
A
Y
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
W
A
WW  
G
R
q
JA  
Continuous Drain  
Current R (Note 1)  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
64  
46  
D
(Note: Microdot may be in either location)  
q
JC  
Power Dissipation  
(Note 1)  
P
22.73  
W
ORDERING INFORMATION  
R
q
JC  
†
Device  
Package  
Shipping  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
192  
A
A
p
Operating Junction and Storage Temperature  
T ,  
stg  
−55 to  
+150  
°C  
NTTFS4985NFTAG  
WDFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
J
T
Source Current (Body Diode)  
Drain to Source dV/dt  
I
32  
6.0  
52  
A
S
NTTFS4985NFTWG  
WDFN8  
(Pb−Free)  
5000 / Tape &  
Reel  
dV/dt  
V/ns  
mJ  
Single Pulse Drain−to−Source Avalanche Energy  
(T = 25°C, V = 50 V, V = 10 V,  
E
AS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
J
DD  
GS  
I = 32 A , L = 0.1 mH, R = 25 W)  
L
pk  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.  
2
2. Surface−mounted on FR4 board using the minimum recommended pad size of 90 mm .  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
January, 2012 − Rev. 1  
NTTFS4985NF/D  
 
1234567

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