Datasheet > NTTFS4H05NTWG

NTTFS4H05NTWG

更新时间： 2024-11-19 01:14:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	93K
描述
Power MOSFET Single NâChannel

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NTTFS4H05NTWG 数据手册

NTTFS4H05N

Power MOSFET

25 V, 94 A, Single N−Channel, m8−FL

Features

• Optimized Design to Minimize Conduction and Switching Losses

• Optimized Package to Minimize Parasitic Inductances

• Optimized material for improved thermal performance

www.onsemi.com

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

MAX R

TYP Q

GTOT

DS(on)

• High Performance DC-DC Converters

• System Voltage Rails

• Netcom, Telecom

4.5 V

10 V

4.8 mW

8.7 nC

18.9 nC

3.3 mW

• Servers & Point of Load

PIN CONNECTIONS

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

m8−FL (3.3 x 3.3 mm)

Parameter

Drain-to-Source Voltage

Symbol

Value

Units

DSS

Gate-to-Source Voltage

Continuous Drain Current R

(T = 25°C, Note 1)

22.4

(Top View)

(Bottom View)

Power Dissipation R

2.66

(T = 25°C, Note 1)

Continuous Drain Current R

(T = 25°C, Note 1)

N−CHANNEL MOSFET

Power Dissipation R

(T = 25°C, Note 1)

46.3

D (5−8)

Pulsed Drain Current (t = 10 ms)

304

Single Pulse Drain-to-Source Avalanche

Energy (Note 1)

G (4)

(I = 41 A , L = 0.1 mH) (Note 3)

Drain to Source dV/dt

dV/dt

V/ns

°C

S (1,2,3)

Maximum Junction Temperature

Storage Temperature Range

150

J(max)

STG

−55 to

150

°C

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of

this data sheet.

Lead Temperature Soldering Reflow (SMD

Styles Only), Pb-Free Versions (Note 2)

SLD

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Values based on copper area of 645 mm (or 1 in ) of 2 oz copper thickness

and FR4 PCB substrate.

2. For more information, please refer to our Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

3. This is the absolute maximum rating. Parts are 100% UIS tested at T = 25°C,

= 10 V, I = 27 A, E = 36 mJ.

L AS

THERMALCHARACTERISTICS

Parameter

Symbol

Max

Units

Thermal Resistance,

Junction-to-Ambient (Note 1 and 4)

Junction-to-Case (Note 1 and 4)

°C/W

2.7

4. Thermal Resistance R

and R

as defined in JESD51−3.

Publication Order Number:

July, 2015 − Rev. 3

NTTFS4H05N/D

12 3 4 5 6 7

中文翻译

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NTTFS4H05NTWG 替代型号

型号	品牌	替代类型	描述	数据表
NTTFS4H05NTAG	ONSEMI	完全替代	Power MOSFET Single NâChannel

与NTTFS4H05NTWG相关器件

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NTTFS4H07N	ONSEMI	获取价格	Single NâChannel Power MOSFET
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NTTFS5811NLTAG	ONSEMI	获取价格	Power MOSFET 40 V, 53 A, 6.4 mΩ
NTTFS5811NLTWG	ONSEMI	获取价格	Power MOSFET 40 V, 53 A, 6.4 mΩ
NTTFS5820NL	ONSEMI	获取价格	Power MOSFET 60 V, 37 A, 11.5 m

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