Datasheet > NTTFS4H07NTWG

NTTFS4H07NTWG

更新时间： 2024-11-19 01:14:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	91K
描述
Single NâChannel Power MOSFET

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NTTFS4H07NTWG 数据手册

NTTFS4H07N

Power MOSFET

25 V, 66 A, Single N−Channel, m8−FL

Features

• Optimized Design to Minimize Conduction and Switching Losses

• Optimized Package to Minimize Parasitic Inductances

• Optimized material for improved thermal performance

www.onsemi.com

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX R

TYP Q

GTOT

Applications

DS(on)

• High Performance DC-DC Converters

• System Voltage Rails

• Netcom, Telecom

4.5 V

10 V

7.1 mW

4.8 mW

5.7 nC

12.4 nC

• Servers & Point of Load

PIN CONNECTIONS

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

m8−FL (3.3 x 3.3 mm)

Parameter

Drain-to-Source Voltage

Symbol

Value

Units

DSS

Gate-to-Source Voltage

Continuous Drain Current R

(T = 25°C, Note 1)

18.5

(Top View)

(Bottom View)

Power Dissipation R

2.64

(T = 25°C, Note 1)

Continuous Drain Current R

(T = 25°C, Note 1)

N−CHANNEL MOSFET

Power Dissipation R

(T = 25°C, Note 1)

33.8

D (5−8)

Pulsed Drain Current (t = 10 ms)

216

Single Pulse Drain-to-Source Avalanche

Energy (Note 1)

G (4)

(I = 32 A , L = 0.1 mH) (Note 3)

Drain to Source dV/dt

dV/dt

V/ns

°C

S (1,2,3)

Maximum Junction Temperature

Storage Temperature Range

150

J(max)

STG

−55 to

150

°C

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 6 of this data sheet.

Lead Temperature Soldering Reflow (SMD

Styles Only), Pb-Free Versions (Note 2)

SLD

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Values based on copper area of 645 mm (or 1 in ) of 2 oz copper thickness

and FR4 PCB substrate.

2. For more information, please refer to our Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

3. This is the absolute maximum rating. Parts are 100% UIS tested at T = 25°C,

= 10 V, I = 21 A, E = 22 mJ.

L AS

THERMALCHARACTERISTICS

Parameter

Symbol

Max

Units

Thermal Resistance,

Junction-to-Ambient (Note 1 and 4)

Junction-to-Case (Note 1 and 4)

°C/W

47.3

3.7

4. Thermal Resistance R

and R

as defined in JESD51−3.

Publication Order Number:

July, 2015 − Rev. 3

NTTFS4H07N/D

12 3 4 5 6 7

中文翻译

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