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NTTFS5820NL PDF预览

NTTFS5820NL

更新时间： 2024-11-21 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 106K
描述
Power MOSFET 60 V, 37 A, 11.5 m

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NTTFS5820NL 数据手册

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NTTFS5820NL  
Power MOSFET  
60 V, 37 A, 11.5 mW  
Features  
• Low R  
DS(on)  
http://onsemi.com  
• Low Capacitance  
• Optimized Gate Charge  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
11.5 mW @ 10 V  
15 mW @ 4.5 V  
60 V  
37 A  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
N−Channel MOSFET  
D (5−8)  
V
60  
20  
11  
V
V
A
DSS  
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
T = 25°C  
I
D
A
Current R  
(Note 1)  
q
JA  
T = 100°C  
A
7
G (4)  
Power Dissipation R  
(Note 1)  
T = 25°C  
P
2.7  
1.1  
37  
24  
33  
13  
149  
W
A
q
D
D
JA  
A
T = 100°C  
A
Steady  
State  
S (1,2,3)  
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
D
C
Current R  
(Note 1)  
q
JC  
T
C
MARKING DIAGRAM  
1
Power Dissipation  
(Note 1)  
T
C
P
W
1
S
S
S
G
D
D
D
D
R
q
JC  
T
C
= 100°C  
5820  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Pulsed Drain Current  
t = 10 ms  
I
A
p
DM  
Operating Junction and Storage Temperature  
T ,  
−55 to  
+150  
°C  
J
stg  
T
5820  
A
Y
WW  
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Source Current (Body Diode)  
I
37  
48  
A
mJ  
A
S
Single Pulse Drain−to−Source  
Avalanche Energy  
L = 0.1 mH  
E
AS  
AS  
I
31  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
(Note: Microdot may be in either location)  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NTTFS5820NLTAG WDFN8 1500 / Tape & Reel  
(Pb−Free)  
THERMAL RESISTANCE MAXIMUM RATINGS  
NTTFS5820NLTWG WDFN8 5000 / Tape & Reel  
Parameter  
Symbol  
Value  
Unit  
(Pb−Free)  
Junction−to−Case – Steady  
State (Note 1)  
R
3.8  
°C/W  
q
JC  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Junction−to−Ambient – Steady  
State (Note 1)  
R
46.7  
q
JA  
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq  
[2 oz] including traces.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 0  
NTTFS5820NL/D  
 
123456

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