Datasheet > NTTFS5D6N08XLTAG

NTTFS5D6N08XLTAG

更新时间： 2024-11-22 17:02:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	210K
描述
MOSFET - Power, Single, N-Channel, Logic Level,?u8FL, 80V, 5.3mΩ,?79 A

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NTTFS5D6N08XLTAG 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, Logic Level,

m8FL

MAX

I MAX

(BR)DSS

DS(ON)

5.3 mW @ 10 V

8.4 mW @ 4.5 V

80 V

79 A

80 V, 5.3 mW, 79 A

D (5−8)

NTTFS5D6N08XL

Features

• Low Q , Soft Recovery Body Diode

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

S (1,2,3)

N−CHANNEL MOSFET

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

MARKING

DIAGRAM

• Synchronous Rectification (SR) in DC−DC and AC−DC

• Primary Switch in Isolated DC−DC Converter

• Motor Drives

S5D6

AYWW

WDFN8

(m8FL)

CASE 511DY

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

S5D6 = Specific Device Code

= Assembly Location

= Year Code

DSS

Gate−to−Source Voltage

WW = Work Week Code

Continuous Drain Current

(Notes 1, 2)

= 25°C

= 100°C

= 25°C

ORDERING INFORMATION

Power Dissipation (Note 1)

†

Device

NTTFS5D6N08XLTAG

Package

Shipping

= 100°C

= 25°C,

WDFN8

(m8FL)

1500 / Tape

& Reel

Pulsed Drain Current

290

t = 100 ms

Pulsed Source Current

(Body Diode)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

STG

Source Current (Body Diode)

Single Pulse Avalanche Energy

118

(I = 34 A) (Note 3)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Actual continuous current will be limited by thermal & electromechanical

application board design.

3. E of 57 mJ is based on T = 25°C; L = 0.1 mH, I = 34 A, V = 64 V,

= 10 V. 100% tested

Publication Order Number:

January, 2024 − Rev. 0

NTTFS5D6N08XL/D

12 3 4 5 6 7

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