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NTTFS5C466NLTAG PDF预览

NTTFS5C466NLTAG

更新时间: 2024-11-19 11:10:59
品牌 Logo 应用领域
安森美 - ONSEMI 脉冲光电二极管晶体管
页数 文件大小 规格书
6页 179K
描述
单 N 沟道,功率 MOSFET,40V,51 A,7.3mΩ

NTTFS5C466NLTAG 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-FReach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:4 weeks
风险等级:2.15雪崩能效等级(Eas):72 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):51 A最大漏极电流 (ID):51 A
最大漏源导通电阻:0.012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):16 pFJESD-30 代码:S-PDSO-F
JESD-609代码:e3湿度敏感等级:1
元件数量:1工作模式:ENHANCEMENT MODE
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):38 W
最大脉冲漏极电流 (IDM):200 A表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

NTTFS5C466NLTAG 数据手册

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