Datasheet > NTTFS6H860NLTAG

NTTFS6H860NLTAG

更新时间： 2024-11-22 11:12:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	217K
描述
Single N−Channel Power MOSFET 80V, 30A, 20mΩ

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NTTFS6H860NLTAG 数据手册

MOSFET - Power, Single

N-Channel

80 V, 20 mW, 30 A

NTTFS6H860NL

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

www.onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• These Devices are Pb−Free and are RoHS Compliant

MAX

I MAX

(BR)DSS

DS(ON)

20 mW @ 10 V

26 mW @ 4.5 V

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

80 V

30 A

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

N−Channel

D (5 − 8)

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

(Notes 1, 2, 3, 4)

Steady

State

Power Dissipation

G (4)

(Notes 1, 2, 3)

= 100°C

Continuous Drain

Current R

T = 25°C

8.1

5.7

3.1

1.6

122

S (1, 2, 3)

T = 100°C

(Notes 1, 3, 4)

Steady

State

MARKING DIAGRAM

Power Dissipation

T = 25°C

(Notes 1, 3)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

XXXX

AYWWG

WDFN8

(m8FL)

CASE 511AB

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

XXXX = Specific Device Code

Single Pulse Drain−to−Source Avalanche

121

= Assembly Location

= Year

Energy (I

= 1.5 A)

L(pk)

= Work Week

= Pb−Free Package

Lead Temperature for Soldering Purposes

260

°C

(1/8″ from case for 10 s)

(Note: Microdot may be in either location)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

3.6

Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

March, 2020 − Rev. 0

NTTFS6H860NL/D

12 3 4 5 6 7

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