NTTFS5826NL

更新时间： 2024-11-18 12:33:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	113K
描述
NTTFS5826NL 60 V, 24 m, Single NâChannel, 8FL

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NTTFS5826NL 数据手册

NTTFS5826NL

Power MOSFET

60 V, 24 mW, Single N−Channel, m8FL

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Designs

• Low Q

to Minimize Switching Losses

• Low Capacitance to Minimize Driver Losses

G(TOT)

http://onsemi.com

• These are Pb−Free Devices

Applications

MAX

I MAX

(BR)DSS

DS(on)

• Motor Drivers

24 mW @ 10 V

32 mW @ 4.5 V

60 V

20 A

• DC−DC Converters

• Synchronous Rectification

• Power Management

N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

"20

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

J−mb

(Notes 1, 2, and 3)

Power Dissipation

(Notes 1, 2,

MARKING DIAGRAM

J−mb

= 100°C

and 3)

Steady

State

Continuous Drain

T = 25°C

5826

AYWWG

WDFN8

(m8FL)

Current R

& 3)

(Notes 1

T = 100°C

CASE 511AB

Power Dissipation

(Notes 1 & 3)

T = 25°C

3.1

1.6

133

T = 100°C

5826

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

stg

Source Current (Body Diode)

(Note: Microdot may be in either location)

Single Pulse Drain−to−Source Avalanche

Energy (T = 25°C, V = 50 V, V = 10 V,

= 14.4 A, L = 1.0 mH, R = 25 W)

L(pk)

ORDERING INFORMATION

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

†

Device

Package

Shipping

NTTFS5826NLTAG WDFN8 1500/Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

(Pb−Free)

NTTFS5826NLTWG WDFN8 5000/Tape & Reel

(Pb−Free)

THERMAL RESISTANCE MAXIMUM RATINGS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Parameter

Symbol

Value

Unit

Junction−to−Mounting Board (top) − Steady

State (Notes 2, 3)

7.9

°C/W

J−mb

Junction−to−Ambient − Steady State (Note 3)

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

Publication Order Number:

November, 2011 − Rev. 2

NTTFS5826NL/D

12 3 4 5 6

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与NTTFS5826NL相关器件

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NTTFS5826NLTAG	ONSEMI	获取价格	NTTFS5826NL 60 V, 24 m, Single NâChannel,
NTTFS5826NLTWG	ONSEMI	获取价格	NTTFS5826NL 60 V, 24 m, Single NâChannel,
NTTFS5C453NL	ONSEMI	获取价格	Power MOSFET
NTTFS5C453NLTAG	ONSEMI	获取价格	Power MOSFET
NTTFS5C453NLTWG	ONSEMI	获取价格	Power MOSFET
NTTFS5C454NL	ONSEMI	获取价格	Power MOSFET
NTTFS5C454NLTAG	ONSEMI	获取价格	Power MOSFET
NTTFS5C454NLTWG	ONSEMI	获取价格	Power MOSFET
NTTFS5C460NLTAG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，74A，4.8mΩ
NTTFS5C466NLTAG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，51 A，7.3mΩ

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