NTTFS5116PL

更新时间： 2024-11-18 12:06:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	113K
描述
Power MOSFET 60 V, 20 A, 52m

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中文翻译

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数据手册

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NTTFS5116PL 数据手册

NTTFS5116PL

Power MOSFET

−60 V, −20 A, 52 mW

Features

• Low R

DS(on)

• Fast Switching

http://onsemi.com

• These Devices are Pb−Free and are RoHS Compliant

Applications

MAX

I MAX

(BR)DSS

DS(on)

• Load Switches

• DC Motor Control

• DC−DC Conversion

52 mW @ −10 V

72 mW @ −4.5 V

−60 V

−20 A

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

P−Channel MOSFET

D (5−8)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

−60

Gate−to−Source Voltage

Continuous Drain

T = 25°C

−5.7

Current R

(Note 1)

T = 100°C

−4.0

3.2

G (4)

Power Dissipation R

(Note 1)

T = 25°C

T = 100°C

1.6

Steady

State

S (1,2,3)

Continuous Drain

= 25°C

−20

−14

Current R

(Note 1)

= 100°C

MARKING DIAGRAM

Power Dissipation

(Note 1)

= 25°C

= 100°C

5116

AYWWG

WDFN8

(m8FL)

Pulsed Drain Current

t = 10 ms

−76

Operating Junction and Storage Temperature

T ,

stg

−55 to

+175

°C

CASE 511AB

Source Current (Body Diode)

−20

5116

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Single Pulse Drain−to−Source Ava- L = 0.1 mH

lanche Energy

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

(Note: Microdot may be in either location)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

†

Device

Package

Shipping

THERMAL RESISTANCE MAXIMUM RATINGS

NTTFS5116PLTAG

WDFN8 1500/Tape & Reel

(Pb−Free)

Parameter

Symbol

Value

Unit

°C/W

Junction−to−Case – Steady

State (Note 1)

3.8

NTTFS5116PLTWG WDFN8 5000/Tape & Reel

(Pb−Free)

Junction−to−Ambient – Steady

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

State (Note 1)

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces.

Publication Order Number:

November, 2011 − Rev. 1

NTTFS5116PL/D

12 3 4 5 6

中文翻译

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与NTTFS5116PL相关器件

型号	品牌	获取价格	描述	数据表
NTTFS5116PLTAG	ONSEMI	获取价格	Power MOSFET 60 V, 20 A, 52m
NTTFS5116PLTWG	ONSEMI	获取价格	Power MOSFET 60 V, 20 A, 52m
NTTFS5811NL	ONSEMI	获取价格	Power MOSFET 40 V, 53 A, 6.4 mΩ
NTTFS5811NLTAG	ONSEMI	获取价格	Power MOSFET 40 V, 53 A, 6.4 mΩ
NTTFS5811NLTWG	ONSEMI	获取价格	Power MOSFET 40 V, 53 A, 6.4 mΩ
NTTFS5820NL	ONSEMI	获取价格	Power MOSFET 60 V, 37 A, 11.5 m
NTTFS5820NLTAG	ONSEMI	获取价格	Power MOSFET 60 V, 37 A, 11.5 m
NTTFS5820NLTWG	ONSEMI	获取价格	Power MOSFET 60 V, 37 A, 11.5 m
NTTFS5826NL	ONSEMI	获取价格	NTTFS5826NL 60 V, 24 m, Single NâChannel,
NTTFS5826NLTAG	ONSEMI	获取价格	NTTFS5826NL 60 V, 24 m, Single NâChannel,

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