5秒后页面跳转
捷配首页

Datasheet > NTTFS4C10N
NTTFS4C10N PDF预览

NTTFS4C10N

更新时间： 2024-11-21 01:14:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 119K
描述
Power MOSFET Dual N−Channel

阅读下载

中文翻译

获取价格

NTTFS4C10N 数据手册

 浏览型号NTTFS4C10N的Datasheet PDF文件第2页浏览型号NTTFS4C10N的Datasheet PDF文件第3页浏览型号NTTFS4C10N的Datasheet PDF文件第4页浏览型号NTTFS4C10N的Datasheet PDF文件第5页浏览型号NTTFS4C10N的Datasheet PDF文件第6页浏览型号NTTFS4C10N的Datasheet PDF文件第7页 
NTTFS4C10N  
Power MOSFET  
30 V, 44 A, Single N−Channel, m8FL  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
V
R
DS(on)  
MAX  
I MAX  
D
(BR)DSS  
Applications  
7.4 mW @ 10 V  
11 mW @ 4.5 V  
30 V  
44 A  
• DC−DC Converters  
• Power Load Switch  
• Notebook Battery Management  
N−Channel MOSFET  
D (5−8)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
V
DSS  
30  
20  
V
V
A
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
I
D
T = 25°C  
13.3  
9.9  
A
G (4)  
Current R  
(Note 1)  
q
JA  
T = 80°C  
A
Power Dissipation R  
(Note 1)  
T = 25°C  
P
2.09  
W
A
q
JA  
A
D
S (1,2,3)  
Continuous Drain  
I
D
T = 25°C  
A
18.2  
13.6  
3.9  
MARKING DIAGRAM  
Current R  
(Note 1)  
≤ 10 s  
q
JA  
T = 80°C  
A
1
1
S
S
S
G
D
D
D
D
Power Dissipation  
≤ 10 s (Note 1)  
T = 25°C  
A
P
I
W
A
D
D
D
4C10  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
R
q
JA  
Steady  
State  
Continuous Drain  
Current R (Note 2)  
T = 25°C  
A
8.2  
6.1  
D
q
JA  
T = 80°C  
A
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
0.79  
W
A
4C10  
A
Y
WW  
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
R
q
JA  
Continuous Drain  
Current R (Note 1)  
T
T
T
= 25°C  
= 80°C  
= 25°C  
44  
33  
D
C
C
C
q
JC  
Power Dissipation  
(Note 1)  
P
23.6  
W
(Note: Microdot may be in either location)  
R
q
JC  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
128  
A
A
p
Operating Junction and Storage Temperature  
T ,  
stg  
−55 to  
°C  
ORDERING INFORMATION  
J
T
+150  
†
Device  
Package  
Shipping  
Source Current (Body Diode)  
I
S
20  
6.0  
31  
A
NTTFS4C10NTAG  
WDFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
Drain to Source dV/dt  
dV/dt  
V/ns  
mJ  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
NTTFS4C10NTWG WDFN8  
5000 / Tape &  
Reel  
(T = 25°C, V = 50 V, V = 10 V, I = 25 A ,  
J
DD  
G
GS  
L
pk  
(Pb−Free)  
L = 0.1 mH, R = 25 W) (Note 3)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
(1/8″ from case for 10 s)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
3. This is the absolute maximum ratings. Parts are 100% tested at T = 25°C,  
J
V
GS  
= 10 V, I = 17 A, E = 14 mJ.  
L AS  
©
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 − Rev. 2  
NTTFS4C10N/D  
 
1234567

中文翻译

下载PDF

与NTTFS4C10N相关器件

型号 品牌 获取价格 描述 数据表
NTTFS4C10NTAG ONSEMI

获取价格

 		Power MOSFET Dual N−Channel
NTTFS4C10NTWG ONSEMI

获取价格

 		Power MOSFET Dual N−Channel
NTTFS4C13N ONSEMI

获取价格

 		Power MOSFET
NTTFS4C13NTAG ONSEMI

获取价格

 		Power MOSFET
NTTFS4C13NTWG ONSEMI

获取价格

 		Power MOSFET
NTTFS4C25NTAG ONSEMI

获取价格

 		单 N 沟道，功率 MOSFET，30V，27A，17mΩ
NTTFS4C25NTWG ONSEMI

获取价格

 		单 N 沟道，功率 MOSFET，30V，27A，17mΩ
NTTFS4D9N04XMTAG ONSEMI

获取价格

 		MOSFET - Power, SingleN-Channel, STD Gate, Po
NTTFS4H05N ONSEMI

获取价格

 		Power MOSFET Single N−Channel
NTTFS4H05NTAG ONSEMI

获取价格

 		Power MOSFET Single N−Channel

与NTTFS4C10N相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证