Datasheet > NTTFS4D9N04XMTAG

NTTFS4D9N04XMTAG

更新时间： 2024-11-19 17:01:15

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
6页	133K
描述
MOSFET - Power, SingleN-Channel, STD Gate, Power3340 V, 4.9 mΩ, 65 A

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NTTFS4D9N04XMTAG 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, STD Gate, m8FL

MAX

I MAX

(BR)DSS

DS(on)

40 V

4.9 mꢂ @ V = 10 V

65 A

40 V, 4.9 mW, 65 A

N−CHANNEL MOSFET

D (5−8)

NTTFS4D9N04XM

Features

• Low R

to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

DS(on)

G (4)

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

S (1,2,3)

Applications

• Motor Drive

• Battery Protection

• Synchronous Rectification

WDFN8

(m8FL)

CASE 511AB

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

MARKING DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

4D9N4

AYWWG

Continuous Drain Current

= 25°C

= 100°C

= 25°C

Power Dissipation

4D9N4 = Specific Device Code

= Assembly Location

= Year

Continuous Drain Current

T = 25°C

ꢀ

T = 100°C

= Work Week

= Pb−Free Package

Pulsed Drain Current

= 25°C,

t = 10 ꢁ s

390

(Note: Microdot may be in either location)

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

STG

Source Current (Body Diode)

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Single Pulse Avalanche Energy (I = 10 A)

°C

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

January, 2024 − Rev. 0

NTTFS4D9N04XM/D

12 3 4 5 6

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