Datasheet > NTTFS4C06NTWG

NTTFS4C06NTWG

更新时间： 2024-11-19 11:12:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	219K
描述
Single N-Channel Power MOSFET 30V, 65A, 4.2mΩ

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NTTFS4C06NTWG 数据手册

NTTFS4C06N

MOSFET – Power, Single,

N-Channel, m8FL

30 V, 67 A

Features

• Low R

http://onsemi.com

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

I MAX

(BR)DSS

DS(on)

4.2 mW @ 10 V

6.1 mW @ 4.5 V

30 V

67 A

Applications

N−Channel MOSFET

D (5−8)

• DC−DC Converters

• Power Load Switch

• Notebook Battery Management

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

G (4)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

S (1,2,3)

Gate−to−Source Voltage

Continuous Drain

T = 25°C

Current R

(Note 1)

MARKING DIAGRAM

T = 85°C

Power Dissipation R

(Note 1)

T = 25°C

2.16

4C06

AYWWG

WDFN8

(m8FL)

CASE 511AB

Continuous Drain

T = 25°C

25.6

18.5

4.4

Current R

(Note 1)

≤ 10 s

T = 85°C

Power Dissipation

≤ 10 s (Note 1)

T = 25°C

4C06

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Steady

State

Continuous Drain

Current R (Note 2)

T = 25°C

T = 85°C

Power Dissipation

(Note 2)

T = 25°C

0.81

(Note: Microdot may be in either location)

Continuous Drain

Current R (Note 1)

= 25°C

= 85°C

= 25°C

ORDERING INFORMATION

Power Dissipation

(Note 1)

†

Device

Package

Shipping

NTTFS4C06NTAG

WDFN8

(Pb−Free)

1500 / Tape &

Reel

Pulsed Drain Current

T = 25°C, t = 10 ms

166

Operating Junction and Storage Temperature

T ,

−55 to

+150

°C

stg

NTTFS4C06NTWG WDFN8

5000 / Tape &

Reel

(Pb−Free)

Source Current (Body Diode)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Drain to Source dV/dt

dV/dt

V/ns

Single Pulse Drain−to−Source Avalanche Energy

(T = 25°C, V = 50 V, V = 10 V, I = 37 A ,

L = 0.1 mH, R = 25 W) (Note 3)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

Publication Order Number:

June, 2019 − Rev. 1

NTTFS4C06N/D

12 3 4 5 6 7 8

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