Datasheet > NTTFS4C08N

NTTFS4C08N

更新时间： 2024-11-19 01:23:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	87K
描述
Power MOSFET

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中文翻译

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NTTFS4C08N 数据手册

NTTFS4C08N

Power MOSFET

30 V, 52 A, Single N−Channel, m8FL

Features

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

www.onsemi.com

MAX

I MAX

(BR)DSS

DS(on)

5.9 mW @ 10 V

9.0 mW @ 4.5 V

Applications

30 V

52 A

• DC−DC Converters

• Power Load Switch

• Notebook Battery Management

N−Channel MOSFET

D (5−8)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

Gate−to−Source Voltage

Continuous Drain

G (4)

T = 25°C

Current R

(Note 1)

T = 85°C

10.8

2.13

S (1,2,3)

Power Dissipation R

(Note 1)

T = 25°C

MARKING DIAGRAM

Continuous Drain

T = 25°C

Current R

(Note 1)

≤ 10 s

T = 85°C

4C08

AYWWG

WDFN8

(m8FL)

CASE 511AB

Power Dissipation

≤ 10 s (Note 1)

T = 25°C

4.2

Steady

State

Continuous Drain

Current R (Note 2)

T = 25°C

9.3

6.7

T = 85°C

4C08

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Power Dissipation

(Note 2)

T = 25°C

0.82

Continuous Drain

Current R (Note 1)

= 25°C

= 85°C

= 25°C

37.5

25.5

(Note: Microdot may be in either location)

Power Dissipation

(Note 1)

Pulsed Drain Current

T = 25°C, t = 10 ms

144

ORDERING INFORMATION

Operating Junction and Storage Temperature

T ,

stg

−55 to

+150

°C

†

Device

Package

Shipping

NTTFS4C08NTAG

WDFN8

(Pb−Free)

1500 / Tape &

Reel

Source Current (Body Diode)

Drain to Source dV/dt

6.0

dV/dt

V/ns

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Single Pulse Drain−to−Source Avalanche Energy

(T = 25°C, V = 10 V, I = 29 A , L = 0.1 mH,

= 25 W) (Note 3)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

3. This is the absolute maximum ratings. Parts are 100% tested at T = 25°C,

= 10 V, I = 21 A, E = 22 mJ.

L AS

Publication Order Number:

April, 2015 − Rev. 2

NTTFS4C08N/D

12 3 4 5 6 7

中文翻译

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与NTTFS4C08N相关器件

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NTTFS4C08NTAG	ONSEMI	获取价格	Power MOSFET
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NTTFS4C25NTAG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，30V，27A，17mΩ
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