Datasheet > NTJD2152P

NTJD2152P

更新时间： 2024-09-13 03:27:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	57K
描述
Trench Small Signal MOSFET

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数据手册

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NTJD2152P 数据手册

NTJD2152P

Trench Small Signal

MOSFET

8 V, Dual P−Channel, SC−88

ESD Protection

http://onsemi.com

Features

• Leading –8 V Trench for Low R

• ESD Protected Gate

• Small Footprint (2 x 2 mm)

• Same Package as SC−70−6

Performance

DS(ON)

TYP

I Max

(BR)DSS

DS(on)

0.22 W @ −4.5 V

0.32 W @ −2.5 V

−8 V

−0.775 A

• Pb−Free Package May be Available. The G−Suffix Denotes a

0.51 W @ −1.8 V

Pb−Free Lead Finish

SOT−363

Applications

SC−88 (6 LEADS)

• Load Power switching

• DC−DC Conversion

• Li−Ion Battery Charging Circuits

• Cell Phones, Media Players, Digital Cameras, PDAs

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol

Value

−8.0

Unit

DSS

Gate−to−Source Voltage

±8.0

Continuous Drain

Current

Steady T = 25 °C

−0.775

−0.558

0.27

Top View

State

T = 85 °C

(Based on R

)

MARKING DIAGRAM

Power Dissipation

(Based on R

Steady T = 25 °C

)

State

T = 85 °C

0.14

TAD

Continuous Drain

Current

Steady T = 25 °C

−1.1

SC−88 (SOT−363)

CASE 419B

Style 26

State

T = 85 °C

−0.8

(Based on R

)

Power Dissipation

(Based on R

Steady T = 25 °C

0.55

= Device Code

= Date Code

)

State

T = 85 °C

0.29

Pulsed Drain Current

t ≤10 ms

±1.2

PIN ASSIGNMENT

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

STG

Source−1

Gate−1

Drain−1

Gate−2

Continuous Source Current (Body Diode)

−0.775

260

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

Drain−2

Source−2

Top View

THERMAL RESISTANCE RATINGS (Note 1)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Parameter

Symbol Typ

Max Unit

460 °C/W

226

Junction−to−Ambient – Steady State

Junction−to−Lead (Drain) – Steady State

400

194

1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

January, 2004 − Rev. 2

NTJD2152/D

12 3 4 5 6

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