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NTE5563 PDF预览

NTE5563

更新时间: 2024-09-09 23:54:59
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NTE5563 数据手册

 浏览型号NTE5563的Datasheet PDF文件第2页 
NTE5562, NTE5564, NTE5566  
Silicon Controlled Rectifiers (SCR’s)  
Description:  
The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO–48 isolated stud  
TO–48 type package designed for industrial and consumer applications such as power supplies, bat-  
tery chargers, temperature, motor, light and welder controls.  
Absolute Maximum Ratings:  
Repetitive Peak Off–State Voltage & Reverse Voltage (TJ = +100°C), VDRM, VRRM  
NTE5562 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200  
NTE5564 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  
NTE5566 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V  
RMS On–State Current (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A  
Peak Surge (Non–Repetitive) On–State Current, ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A  
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Peak Gate–Power Dissipation (IGT for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W  
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W  
Operating Temperature Range, Toper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C  
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6/W  
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)  
Parameter  
Symbol  
Test Conditions  
T = +100°C, Gate Open, V  
Min Typ Max Unit  
Peak Off–State Current  
I
,
&V  
RRM  
2.0 mA  
DRM  
J
DRM  
I
RRM  
Maximum On–State Voltage (Peak)  
DC Holding Current  
V
T = +25°C  
1.6  
50  
30  
V
TM  
C
I
T = +25°C, Gate Open  
C
mA  
mA  
HO  
DC Gate Trigger Current  
I
GT  
Anode Voltage = 12Vdc, R = 30,  
L
T =+ 25°C  
C
DC Gate Controlled Turn–On Time  
T
I
= 150mA , t +t  
R
2.5  
µs  
GT  
GT  
D
Critical Rate of Rise of Off–State Voltage  
Critical T = +100°C, Gate Open  
100  
V/µs  
C
dv/dt  

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