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NTB5860NL

更新时间： 2024-09-13 12:22:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 122K
描述
N-Channel Power MOSFET

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NTB5860NL 数据手册

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NTB5860NL, NTP5860NL,  
NVB5860NL  
N-Channel Power MOSFET  
60 V, 220 A, 3.0 mW  
Features  
http://onsemi.com  
• Low R  
DS(on)  
• High Current Capability  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• 100% Avalanche Tested  
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant  
3.0 mW @ 10 V  
3.6 mW @ 4.5 V  
60 V  
220 A  
• NVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
D
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage − Continuous  
Symbol  
Value  
60  
Unit  
V
G
V
DSS  
V
GS  
$20  
220  
156  
283  
V
S
N−CHANNEL MOSFET  
Continuous Drain  
Current, R  
Steady  
State  
T = 25°C  
I
D
A
A
q
JC  
T = 100°C  
A
4
Power Dissipation,  
R
Steady  
State  
T = 25°C  
A
P
D
W
q
JC  
4
Pulsed Drain Current  
t = 10 ms  
I
660  
130  
A
A
p
DM  
1
2
Current Limited by Package  
I
DMmax  
3
Operating and Storage Temperature Range  
T , T  
J
−55 to  
+175  
°C  
stg  
2
TO−220AB  
CASE 221A  
STYLE 5  
D PAK  
CASE 418B  
STYLE 2  
1
Source Current (Body Diode)  
I
S
130  
735  
A
2
3
Single Pulse Drain−to−Source Avalanche  
Energy (L = 0.3 mH)  
E
mJ  
AS  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Lead Temperature for Soldering  
Purposes (1/8″ from Case for 10 Seconds)  
T
260  
°C  
L
4
4
Drain  
Drain  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
0.53  
28  
Unit  
NTB  
5860NLG  
AYWW  
Junction−to−Case (Drain) Steady State  
Junction−to−Ambient − Steady State (Note 1)  
R
°C/W  
q
JC  
NTP  
5860NLG  
AYWW  
R
q
JA  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 sq in pad size,  
2
1
Gate  
3
1
Gate  
3
Drain  
Source  
Source  
2
(Cu Area 1.127 sq in [2 oz] including traces).  
Drain  
G
A
Y
= Pb−Free Device  
= Assembly Location  
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
Augsut, 2012 − Rev. 1  
NTB5860NL/D  
 
1234567

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