NTB65N02RG

更新时间： 2024-11-05 03:45:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	76K
描述
Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK

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中文翻译

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数据手册
替代型号

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NTB65N02RG 数据手册

NTB65N02R, NTP65N02R

Power MOSFET

65 A, 24 V N−Channel

TO−220, D²PAK

Features

http://onsemi.com

• Planar HD3e Process for Fast Switching Performance

• Low R

to Minimize Conduction Loss

DSon

TYP

I MAX

(BR)DSS

DS(on)

• Low C to Minimize Driver Loss

iss

24 V

8.4 mW @ 10 V

65 A

• Low Gate Charge

• Pb−Free Packages are Available*

MAXIMUM RATINGS (T = 25°C Unless otherwise specified)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

Gate−to−Source Voltage − Continuous

Thermal Resistance − Junction−to−Case

±20

MARKING

DIAGRAMS

2.0

°C/W

Total Power Dissipation @ T = 25°C

62.5

Drain Current −

Continuous @ T = 25°C, Chip

Continuous @ T =25°C, Limited by Package

Single Pulse (t = 10 ms)

160

TO−220AB

CASE 221A

STYLE 5

Thermal Resistance −

Junction−to−Ambient (Note 1)

Total Power Dissipation @ T = 25°C

Drain Current − Continuous @ T = 25°C

P65N02RG

AYWW

1.86

°C/W

Thermal Resistance −

Junction−to−Ambient (Note 2)

Total Power Dissipation @ T = 25°C

Drain Current − Continuous @ T = 25°C

120

1.04

7.6

°C/W

D PAK

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

T and

−55 to

150

°C

65N02RG

AYWW

CASE 418AA

STYLE 2

stg

Energy − Starting T = 25°C

(V = 50 V , V = 10 V , I = 11 A ,

65N02R = Specific Device Code

L = 1 mH, R = 25 W)

= Assembly Location

= Year

= Work Week

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

260

°C

= Pb−Free Package

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

PIN ASSIGNMENT

FUNCTION

1. When surface mounted to an FR4 board using 1 in. pad size, (Cu Area 1.127 in ).

Gate

2. When surface mounted to an FR4 board using minimum recommended pad

size, (Cu Area 0.412 in ).

Drain

Source

Drain

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

May, 2005 − Rev. 6

NTB65N02R/D

12 3 4 5 6 7 8

中文翻译

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NTB65N02RG 替代型号

型号	品牌	替代类型	描述	数据表
NTB65N02R	ONSEMI	类似代替	Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK

与NTB65N02RG相关器件

型号	品牌	获取价格	描述	数据表
NTB65N02RT4	ONSEMI	获取价格	Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK
NTB65N02RT4G	ONSEMI	获取价格	Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK
NTB6N60	ONSEMI	获取价格	6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
NTB6N60	ROCHESTER	获取价格	6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
NTB6N60T4	ONSEMI	获取价格	6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
NTB6N60T4	ROCHESTER	获取价格	6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
NTB707	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 7A I(C) \| TO-220AB
NTB708	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 7A I(C) \| TO-220AB
NTB70N08	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| TO-263AB
NTB70N08L	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| TO-263AB

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