Datasheet > NTB75N03-6G

NTB75N03-6G

更新时间： 2024-09-16 01:19:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	80K
描述
Power MOSFET 75 Amps, 30 Volts

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数据手册

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NTB75N03-6G 数据手册

NTP75N03−06,

NTB75N03−06

Power MOSFET

75 Amps, 30 Volts

N−Channel TO−220 and D²PAK

http://onsemi.com

This 20 V

gate drive vertical Power MOSFET is a general

purpose part that provides the “best of design” available today in a low

cost power package. This power MOSFET is designed to withstand

high energy in the avalanche and commutation modes. The

Drain−to−SourceDiode has a fast response with soft recovery.

TYP

I MAX

(BR)DSS

DS(on)

30 V

5.3 mW @ 10 V

75 A

Features

• Ultra−Low R

, Single Base, Advanced Technology

DS(on)

• SPICE Parameters Available

• Diode is Characterized for Use in Bridge Circuits

• I

and V

Specified at Elevated Temperatures

DSS

DS(on)

• High Avalanche Energy Capability

• ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0

• Pb−Free Packages are Available

TO−220AB

D PAK

CASE 221A

STYLE 5

CASE 418AA

STYLE 2

Typical Applications

• Power Supplies

• Inductive Loads

MARKING DIAGRAMS

& PIN ASSIGNMENTS

• PWM Motor Controls

• Replaces MTP1306 and MTB1306

Drain

N−Channel

75N

03−06G

AYWW

75N

03−06G

AYWW

Gate

Source

Drain

N75N03−06

= Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

August, 2005 − Rev. 6

NTP75N03−06/D

12 3 4 5 6 7

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