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NTB85N03 PDF预览

NTB85N03

更新时间: 2024-11-05 22:23:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
12页 84K
描述
Power MOSFET 85 Amps, 28 Volts

NTB85N03 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CASE 418AA-01, D2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.84雪崩能效等级(Eas):61 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):85 A
最大漏极电流 (ID):15 A最大漏源导通电阻:0.0068 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):80 W
最大脉冲漏极电流 (IDM):45 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

NTB85N03 数据手册

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NTP85N03, NTB85N03  
Power MOSFET  
85 Amps, 28 Volts  
N−Channel TO−220 and D2PAK  
Designed for low voltage, high speed switching applications in  
power supplies, converters and power motor controls and bridge  
circuits.  
http://onsemi.com  
Typical Applications  
Power Supplies  
Converters  
Power Motor Controls  
Bridge Circuits  
85 AMPERES  
28 VOLTS  
RDS(on) = 6.1 mW (Typ.)  
N−Channel  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol Value Unit  
Drain−to−Source Voltage  
V
28  
Vdc  
Vdc  
DSS  
Gate−to−Source Voltage  
− Continuous  
G
V
"20  
GS  
4
Drain Current  
S
− Continuous @ T = 25°C  
I
85*  
190  
Adc  
Apk  
C
D
4
− Single Pulse (t = 10 ms)  
I
p
DM  
1
2
Total Power Dissipation @ T = 25°C  
P
D
80  
W
C
Derate above 25°C  
0.66  
W/°C  
3
2
Operating and Storage Temperature Range  
T , T  
55  
to  
+150  
°C  
D PAK  
J
stg  
TO−220AB  
CASE 221A  
Style 5  
CASE 418AA  
Style 2  
1
2
Single Pulse Drain−to−Source Avalanche  
E
AS  
733  
mJ  
3
Energy − Starting T = 25°C  
J
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
(V = 28 Vdc, V = 10 Vdc, L = 5.0 mH,  
DD  
GS  
I
= 17 A, RG = 25 W)  
L(pk)  
4
Thermal Resistance  
°C/W  
°C  
4
Drain  
Junction−to−Case  
Junction−to−Ambient (Note 1)  
R
R
1.55  
70  
Drain  
q
JC  
JA  
q
Maximum Lead Temperature for Soldering  
T
260  
L
Purposes, 1/8from case for 10 seconds  
NTx85N03  
LLYWW  
NTx85N03  
LLYWW  
1. When surface mounted to an FR4 board using 1pad size,  
2
(Cu Area 1.127 in ).  
*Chip current capability limited by package.  
1
Gate  
3
2
1
Gate  
3
Source  
Drain  
Source  
NTx85N03 = Device Code  
2
x
= P or B  
Drain  
LL  
Y
= Location Code  
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NTP85N03  
NTB85N03  
NTB85N03T4  
TO−220AB  
50 Units/Rail  
50 Units/Rail  
2
D PAK  
2
D PAK  
800/Tape & Reel  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
October, 2003 − Rev. 1  
NTP85N03/D  

NTB85N03 替代型号

型号 品牌 替代类型 描述 数据表
NTB85N03T4 ONSEMI

完全替代

Power MOSFET 85 Amps, 28 Volts
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