Datasheet > NTBG060N065SC1

NTBG060N065SC1

更新时间： 2024-11-07 11:13:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	305K
描述
Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTBG060N065SC1 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – EliteSiC,

44ꢀmohm, 650ꢀV, M2,

D2PAK-7L

MAX

I MAX

(BR)DSS

DS(ON)

650 V

70 mW @ 18 V

46 A

Drain (TAB)

NTBG060N065SC1

Gate (Pin 1)

Features

• Typ. R

= 44 mW @ V = 18 V

DS(on)

Typ. R

= 60 mW @ V = 15 V

Driver Source (Pin 2)

• Ultra Low Gate Charge (Q

= 74 nC)

G(tot)

Power Source (Pins 3, 4, 5, 6, 7)

• Low Output Capacitance (C = 133 pF)

oss

N−CHANNEL MOSFET

• 100% Avalanche Tested

• T = 175°C

• RoHS Compliant

Typical Applications

• SMPS (Switching Mode Power Supplies)

• Solar Inverters

• UPS (Uninterruptable Power Supplies)

• Energy Storage

D2PAK−7L

CASE 418BJ

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

650

Unit

MARKING DIAGRAM

DSS

Gate−to−Source Voltage

−8/+22

−5/+18

BG060N

065SC1

AYWWZZ

Recommended Operation Val-

ues of Gate − Source Voltage

< 175°C

= 25°C

GSop

Continuous Drain

Current (Note 2)

170

Steady

State

BG060N065SC1 = Specific Device Code

= Assembly Location

= Year

WW = Work Week

Power Dissipation

(Note 2)

Continuous Drain

Current (Notes 1, 2)

Steady

State

= 100°C

= 25°C

= Lot Traceability

Power Dissipation

(Notes 1, 2)

ORDERING INFORMATION

Pulsed Drain Current (Note 3)

130

†

Device

Package

Shipping

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

NTBG060N065SC1 D2PAK−7L

800 / Tape &

Reel

Source Current (Body Diode)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Single Pulse Drain−to−Source Avalanche

Energy (I = 10.1 A , L = 1 mH) (Note 4)

Maximum Lead Temperature for Soldering, 1/8″

from Case for 10 Seconds

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper.

2. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

3. Repetitive rating, limited by max junction temperature.

4. E of 51 mJ is based on starting T = 25°C; L = 1 mH, I = 10.1 A,

= 50 V, V = 18 V.

Publication Order Number:

January, 2023 − Rev. 2

NTBG060N065SC1/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与NTBG060N065SC1相关器件

型号	品牌	获取价格	描述	数据表
NTBG060N090SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L
NTBG070N120M3S	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 65 m
NTBG080N120SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L
NTBG1000N170M1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET – EliteSiC, 960
NTBG160N120SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L
NTBGS001N06C	ONSEMI	获取价格	Power MOSFET, 60 V, 1.1 m, 342 A, Single N−Ch
NTBGS002N06C	ONSEMI	获取价格	Power MOSFET, 60 V, 2.2 m, 211 A, Single N−Ch
NTBGS004N10G	ONSEMI	获取价格	Power MOSFET 203 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK 7L
NTBGS1D5N06C	ONSEMI	获取价格	Power MOSFET, 60 V, 1.62 m, 267 A, Single N−C
NTBGS2D5N06C	ONSEMI	获取价格	Power MOSFET, 60 V, 2.5 mΩ, 224 A, Single N−C

与NTBG060N065SC1相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

NTBG060N065SC1

NTBG060N065SC1 数据手册

与NTBG060N065SC1相关器件

与NTBG060N065SC1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTBG060N065SC1

NTBG060N065SC1 数据手册

与NTBG060N065SC1相关器件

与NTBG060N065SC1相关文章

您还可以找

您在本页遇到什么问题？