Datasheet > NTBL150N60S5H

NTBL150N60S5H

更新时间： 2024-11-10 11:13:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	255K
描述
MOSFET - Power, N‐Channel, SUPERFET® V, FAST, 600 V, 19 A, 150 mΩ, TOLL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTBL150N60S5H 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, SUPERFET⁾,

FAST, TOLL-4L

MAX

I MAX

(BR)DSS

DS(ON)

600 V

150 mW @ 10 V

19 A

600 V, 150 mW, 19 A

NTBL150N60S5H

Description

S1: Driver Source

S2: Power Source

The SUPERFET V MOSFET FAST series helps maximize system

efficiency by the extremely low switching losses in hard switching

application. The TOLL package offers improved thermal performance

and excellent switching performance by providing a Kelvin Source

configuration and lower parasitic source inductance.

S1 S2

N−Channel MOSFET

Features

• 650 V @ T = 150°C, Typ. R

= 120 mW

DS(on)

• 100% Avalanche Tested

• Pb−Free, Halogen Free / BFR Free and are RoHS Compliant

Applications

• Telecom / Server Power Supplies

• EV Charger / UPS / Solar / Industrial Power Supplies

H−PSOF8L 9.90x11.68, 1.20P

CASE 100DC

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol

Value

600

Unit

DSS

AYWWZZ

Gate−to−Source Voltage

AC (f > 1 Hz)

NTBL150

N60S5H

Continuous Drain Current

= 25°C

= 100°C

= 25°C

Power Dissipation

133

= Assembly Location

= Year

Pulsed Drain Current (Note 1)

= Work Week

= Assembly Lot Code

Pulsed Source Current

(Body Diode) (Note 1)

NTBL150N60S5H = Specific Device Code

Operating Junction and Storage Temperature T , T

Range

−55 to

+150

°C

STG

ORDERING INFORMATION

Source Current (Body Diode)

†

Single Pulse Avalanche

Energy

I = 4.1 A

153

Device

Package

Shipping

= 25 W

NTBL150N60S5H H−PSOF8L

2000 / Tape &

Reel

Avalanche Current

4.1

1.33

120

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

dv/dt

V/ns

Peak Diode Recovery dv/dt (Note 2)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I ≤ 9.5 A, di/dt ≤ 200 A/s, V ≤ 400 V, starting T = 25°C.

Publication Order Number:

October, 2022 − Rev. 0

NTBL150N60S5H/D

12 3 4 5 6 7

中文翻译

下载PDF

与NTBL150N60S5H相关器件

型号	品牌	获取价格	描述	数据表
NTBLS001N06C	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel, TOLL, 60 V
NTBLS002N08MC	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel, TOLL, 80 V
NTBLS0D7N06C	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel, TOLL, 60 V
NTBLS1D1N08H	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel, TOLL, 80 V
NTBLS1D5N08MC	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel, TOLL, 80 V
NTBLS1D5N10MCTXG	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel, TOLL, 100
NTBLS1D7N08H	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel, TOLL, 80 V
NTBLS1D7N10MCTXG	ONSEMI	获取价格	MOSFET, Power, Single N-Channel, 100V, TOLL Package
NTBLS4D0N15MC	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel, TOLL, 150
NTBR25-045L	YAGEO	获取价格	负温度系数热敏电阻

与NTBL150N60S5H相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

NTBL150N60S5H

NTBL150N60S5H 数据手册

与NTBL150N60S5H相关器件

与NTBL150N60S5H相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTBL150N60S5H

NTBL150N60S5H 数据手册

与NTBL150N60S5H相关器件

与NTBL150N60S5H相关文章

您还可以找

您在本页遇到什么问题？