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NTBS2D7N06M7 PDF预览

NTBS2D7N06M7

更新时间: 2024-09-17 11:16:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 243K
描述
功率 MOSFET,N 沟道,标准门极,60 V,110 A,2.7 mΩ

NTBS2D7N06M7 数据手册

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NTBS2D7N06M7  
N‐Channel PowerTrench)  
MOSFET  
60 V, 110 A, 2.7 mW  
Features  
www.onsemi.com  
Typical R  
Typical Q  
UIS Capability  
= 2.2 mW at V = 10 V, I = 80 A  
GS D  
DS(on)  
= 80 nC at V = 10 V, I = 80 A  
g(tot)  
GS  
D
D
These Devices are Pb−Free and are RoHS Compliant  
Applications  
Industrial Motor Drive  
Industrial Power Supply  
Industrial Automation  
Battery Operated Tools  
Battery Protection  
Solar Inverters  
G
S
UPS and Energy Inverters  
Energy Storage  
Load Switch  
2
D PAK−3  
TO−263  
CASE 418AJ  
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)  
J
Rating  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
MARKING DIAGRAM  
V
GS  
20  
V
Drain Current − Continuous (T = 25°C)  
GS  
I
D
110  
A
C
NTB  
S2D7N06M7  
AYWWG  
(V = 10) (Note 1)  
Pulsed Drain Current (T = 25°C)  
See  
Figure 4  
C
Single Pulse Avalanche Energy (Note 2)  
Power Dissipation  
E
193  
176  
1.2  
mJ  
W
AS  
P
D
Derate Above 25°C  
W/°C  
°C  
NTBS2D7N06M7= Specific Device Code  
Operating and Storage Temperature  
Range  
T , T  
−55 to  
+175  
A
Y
= Assembly Location  
= Year  
J
STG  
WW  
G
= Work Week  
= Pb-Free Package  
Thermal Resistance, Junction to Case  
R
0.85  
43  
_C/W  
_C/W  
q
q
JC  
Maximum Thermal Resistance, Junction  
to Ambient (Note 3)  
R
JA  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
1. Current is limited by bondwire configuration.  
2. Starting T = 25°C, L = 50 mH, I = 88 A, V = 60 V during inductor  
J
AS  
DD  
charging and V = 0 V during time in avalanche.  
DD  
3. R  
is the sum of the junction−to−case and case−to−ambient thermal  
q
JA  
resistance, where the case thermal reference is defined as the solder  
mounting surface of the drain pins. R is guaranteed by design, while  
q
JC  
R
is determined by the board design. The maximum rating presented here  
q
JA  
2
is based on mounting on a 1 in pad of 2oz copper.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
December, 2017 − Rev. 0  
NTBS2D7N06M7/D  
 

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