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NTBL048N60S5H

更新时间： 2024-09-17 11:14:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 247K
描述
MOSFET - Power, N‐Channel, SUPERFET® V, FAST, 600 V, 50 A, 48 mΩ, TOLL

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NTBL048N60S5H 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, SUPERFET),  
FAST, TOLL-4L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
600 V  
48 mW @ 10 V  
50 A  
D
600 V, 48 mW, 50 A  
NTBL048N60S5H  
Description  
G
The SUPERFET V MOSFET FAST series helps maximize system  
efficiency by the extremely low switching losses in hard switching  
application. The TOLL package offers improved thermal performance  
and excellent switching performance by providing a Kelvin Source  
configuration and lower parasitic source inductance.  
Features  
S1: Driver Source  
S2: Power Source  
S1  
S2  
POWER MOSFET  
D
• 650 V @ T = 150°C / Typ. R  
= 38.4 mW  
J
DS(on)  
• 100% Avalanche Tested  
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant  
G
S1  
Applications  
• Telecom / Server Power Supplies  
• EV Charger / UPS / Solar / Industrial Power Supplies  
S2  
H−PSOF8L  
CASE 100DC  
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
600  
30  
Unit  
V
V
DSS  
MARKING DIAGRAM  
Gate−to−Source Voltage  
DC  
V
GS  
V
AC (f > 1 Hz)  
30  
Continuous Drain Current  
T
= 25°C  
= 100°C  
= 25°C  
= 25°C  
= 25°C  
I
50  
A
AYWWZZ  
C
D
T
C
31  
Power Dissipation  
T
C
T
C
T
C
P
297  
175  
175  
W
A
D
NTBL048  
N60S5H  
Pulsed Drain Current (Note 1)  
I
DM  
Pulsed Source Current (Body  
Diode) (Note 1)  
I
A
SM  
Operating Junction and Storage Temperature T , T  
−55 to  
+150  
°C  
J
STG  
A
Y
= Assembly Location  
= Year  
Range  
WW  
ZZ  
= Work Week  
= Assembly Lot Code  
Source Current (Body Diode)  
I
50  
A
S
Single Pulse Avalanche  
Energy  
I = 7.6 A  
G
E
AS  
478  
mJ  
L
NTBL048N60S5H = Specific Device Code  
R
= 25 W  
Avalanche Current  
I
7.6  
2.98  
120  
20  
A
AS  
ORDERING INFORMATION  
Repetitive Avalanche Energy (Note 1)  
MOSFET dv/dt  
E
mJ  
AR  
†
dv/dt  
V/ns  
Device  
Package  
Shipping  
Peak Diode Recovery dv/dt (Note 2)  
NTBL048N60S5H  
H−PSOF8L  
2000 / Tape &  
Reel  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 seconds)  
T
L
260  
°C  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Repetitive rating: pulse−width limited by maximum junction temperature.  
2. I ≤ 25 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.  
SD  
DD  
J
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
July, 2022 − Rev. 1  
NTBL048N60S5H/D  
 
1234567

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