Datasheet > NTBG080N120SC1

NTBG080N120SC1

更新时间： 2024-11-07 11:14:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	316K
描述
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

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NTBG080N120SC1 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – EliteSiC,

80ꢀmohm, 1200ꢀV, M1,

D2PAK-7L

MAX

I MAX

(BR)DSS

DS(ON)

1200 V

110 mW @ 20 V

30 A

Drain (TAB)

NTBG080N120SC1

Gate (Pin 1)

Features

• Typ. R

= 80 mW

• Ultra Low Gate Charge (Typ. Q

DS(on)

Driver Source (Pin 2)

= 56 nC)

G(tot)

• Low Effective Output Capacitance (Typ. C = 79 pF)

oss

Power Source (Pins 3, 4, 5, 6, 7)

• 100% Avalanche Tested

N−CHANNEL MOSFET

• T = 175°C

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

• UPS

• DC-DC Converter

• Boost Inverter

D2PAK−7L

CASE 418BJ

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

1200

Unit

MARKING DIAGRAM

DSS

Gate−to−Source Voltage

−15/+25

−5/+20

AYWWZZ

NTBG

080120SC1

Recommended Operation

Values of Gate−Source Voltage

< 175°C

= 25°C

GSop

Continuous Drain

Current (Note 1)

179

Steady

State

= Assembly Location

= Year

WW = Work Week

ZZ = Lot Traceability

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 1)

Steady

State

= 100°C

= 25°C

NTBG080120SC1 = Specific Device Code

Power Dissipation

(Note 1)

ORDERING INFORMATION

Pulsed Drain Current (Note 2)

110

†

Device

Package

Shipping

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

NTBG080N120SC1

D2PAK−7L

800 /

Source Current (Body Diode)

Tape & Reel

Single Pulse Drain−to−Source Avalanche

171

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Energy (I = 18.5 A , L = 1 mH) (Note 3)

Maximum Lead Temperature for Soldering,

1/8″ from Case for 10 Seconds

300

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. E of 171 mJ is based on starting T = 25°C; L = 1 mH, I = 18.5 A,

= 120 V, V = 18 V.

Publication Order Number:

January, 2023 − Rev. 4

NTBG080N120SC1/D

12 3 4 5 6 7 8

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与NTBG080N120SC1相关器件

型号	品牌	获取价格	描述	数据表
NTBG1000N170M1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET – EliteSiC, 960
NTBG160N120SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L
NTBGS001N06C	ONSEMI	获取价格	Power MOSFET, 60 V, 1.1 m, 342 A, Single N−Ch
NTBGS002N06C	ONSEMI	获取价格	Power MOSFET, 60 V, 2.2 m, 211 A, Single N−Ch
NTBGS004N10G	ONSEMI	获取价格	Power MOSFET 203 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK 7L
NTBGS1D5N06C	ONSEMI	获取价格	Power MOSFET, 60 V, 1.62 m, 267 A, Single N−C
NTBGS2D5N06C	ONSEMI	获取价格	Power MOSFET, 60 V, 2.5 mΩ, 224 A, Single N−C
NTBGS3D5N06C	ONSEMI	获取价格	Power MOSFET, 60 V, 3.7 mΩ, 127A, Single N−Ch
NTBGS4D1N15MC	ONSEMI	获取价格	Power MOSFET, 150 V, 4.1 mΩ, 185A, Single N−
NTBGS6D5N15MC	ONSEMI	获取价格	Power MOSFET, 150 V, 6.5 mΩ, A, Single N−Cha

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