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NTBGS6D5N15MC PDF预览

NTBGS6D5N15MC

更新时间: 2024-09-17 11:14:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 286K
描述
Power MOSFET, 150 V, 6.5 mΩ, A, Single N−Channel, D2PAK7

NTBGS6D5N15MC 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:,Reach Compliance Code:compliant
Factory Lead Time:43 weeks 1 day风险等级:5.76
Base Number Matches:1

NTBGS6D5N15MC 数据手册

 浏览型号NTBGS6D5N15MC的Datasheet PDF文件第2页浏览型号NTBGS6D5N15MC的Datasheet PDF文件第3页浏览型号NTBGS6D5N15MC的Datasheet PDF文件第4页浏览型号NTBGS6D5N15MC的Datasheet PDF文件第5页浏览型号NTBGS6D5N15MC的Datasheet PDF文件第6页浏览型号NTBGS6D5N15MC的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, D2PAK7  
150 V, 7 mW, 121 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
150 V  
7 mW @ 10 V  
8.7 mW @ 8 V  
121 A  
NTBGS6D5N15MC  
D (Pin 4, TAB)  
Features  
Low R  
to Minimize Conduction Losses  
Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
G (Pin 1)  
G
Lowers Switching Noise/EMI  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
S (Pins 2,3,5,6,7)  
NCHANNEL MOSFET  
Typical Applications  
MARKING  
DIAGRAM  
Power Tools, Battery Operated Vacuums  
UAV/Drones, Material Handling  
BMS/Storage, Home Automation  
AYWWZZ  
NTBG  
S6D5N15  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
2
D PAK7  
Parameter  
DraintoSource Voltage  
Symbol  
Value  
150  
20  
Unit  
V
CASE 418AY  
V
DSS  
NTBGS6D5N15 = Specific Device Code  
GatetoSource Voltage  
V
GS  
V
A
Y
WW  
ZZ  
= Assembly Location  
= Year  
= Work Week  
Continuous Drain  
Current R  
Steady  
State  
T
C
= 25°C  
I
D
121  
A
q
JC  
(Note 2)  
= Assembly Lot Number  
Power Dissipation  
P
238  
15  
W
A
D
R
(Note 2)  
q
JC  
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
ORDERING INFORMATION  
q
JA  
(Notes 1, 2)  
Device  
NTBGS6D5N15MC  
Package  
Shipping  
2
Power Dissipation  
P
D
3.7  
W
800 /  
D PAK7  
R
(Notes 1, 2)  
q
JA  
Tape & Reel  
(PbFree)  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
1800  
A
A
p
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Operating Junction and Storage Temperature  
T , T  
55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
S
198  
180  
A
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (I = 60 A , L = 0.1 mH)  
L
pk  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surfacemounted on FR4 board using a 1 in , 1 oz. Cu pad.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
February, 2022 Rev. 1  
NTBGS6D5N15MC/D  
 

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