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NTBG160N120SC1 PDF预览

NTBG160N120SC1

更新时间： 2024-09-17 11:14:39
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
8页 320K
描述
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L

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NTBG160N120SC1 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G7Reach Compliance Code：compliant
Factory Lead Time：43 weeks 1 day风险等级：5.47
雪崩能效等级（Eas）：120 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：1200 V
最大漏极电流 (Abs) (ID)：19.5 A最大漏极电流 (ID)：19.5 A
最大漏源导通电阻：0.224 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：5.87 pFJEDEC-95代码：TO-263CB
JESD-30 代码：R-PSSO-G7湿度敏感等级：1
元件数量：1端子数量：7
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：136 W
最大脉冲漏极电流 (IDM)：78 A表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON CARBIDE
最大关闭时间（toff）：42 ns最大开启时间（吨）：40 ns
Base Number Matches：1

NTBG160N120SC1 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – EliteSiC,  
160ꢀmohm, 1200ꢀV, M1,  
D2PAK-7L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
1200 V  
224 mW @ 20 V  
19.5 A  
Drain (TAB)  
NTBG160N120SC1  
Gate (Pin 1)  
Features  
• Typ. R  
= 160 mW  
• Ultra Low Gate Charge (typ. Q  
DS(on)  
= 33.8 nC)  
G(tot)  
Driver Source (Pin 2)  
Power Source (Pins 3, 4, 5, 6, 7)  
• Low Effective Output Capacitance (typ. C = 50.7 pF)  
oss  
• 100% Avalanche Tested  
N−CHANNEL MOSFET  
• T = 175°C  
J
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
• UPS  
• DC-DC Converter  
• Boost Inverter  
D2PAK−7L  
CASE 418BJ  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
1200  
Unit  
V
MARKING DIAGRAM  
V
DSS  
Gate−to−Source Voltage  
V
−15/+25  
−5/+20  
V
GS  
AYWWZZ  
NTBG  
160120SC1  
Recommended Operation  
Values of Gate−Source Voltage  
T
< 175°C  
= 25°C  
V
GSop  
V
C
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
I
19.5  
136  
13.7  
68  
A
W
A
C
D
A
Y
= Assembly Location  
= Year  
Power Dissipation  
(Note 1)  
P
D
WW = Work Week  
ZZ = Lot Traceability  
NTBG160120SC1 = Specific Device Code  
Continuous Drain  
Current (Note 1)  
Steady  
State  
T
C
= 100°C  
I
D
Power Dissipation  
(Note 1)  
P
W
D
ORDERING INFORMATION  
Pulsed Drain Current (Note 2)  
T = 25°C  
A
I
78  
A
DM  
†
Device  
Package  
Shipping  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
+175  
NTBG160N120SC1  
D2PAK−7L  
800 /  
Source Current (Body Diode)  
I
S
13.6  
120  
A
Tape & Reel  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Energy (I = 15.5 A , L = 1 mH) (Note 3)  
L
pk  
Maximum Lead Temperature for Soldering,  
1/8″ from Case for 10 Seconds  
T
L
300  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Repetitive rating, limited by max junction temperature.  
3. E of 120 mJ is based on starting T = 25°C; L = 1 mH, I = 15.5 A,  
AS  
DD  
J
AS  
V
= 120 V, V = 18 V.  
GS  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
January, 2023 − Rev. 3  
NTBG160N120SC1/D  
 
12345678

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