Datasheet > NTBGS4D1N15MC

NTBGS4D1N15MC

更新时间： 2024-09-17 11:14:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	286K
描述
Power MOSFET, 150 V, 4.1 mΩ, 185A, Single N−Channel, D2PAK7

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTBGS4D1N15MC 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Single N-Channel

MAX

I MAX

(BR)DSS

DS(ON)

4.1 mW @ 10 V

4.7 mW @ 8 V

150 V

185 A

150 V, 4.1 mW, 185 A

NTBGS4D1N15MC

D (Pin 4, TAB)

Features

 Low R

to Minimize Conduction Losses

DS(on)

 Low Q and Capacitance to Minimize Driver Losses

G (Pin 1)

 Lowers Switching Noise/EMI

 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

S (Pins 2,3,5,6,7)

N−CHANNEL MOSFET

Compliant

Typical Applications

 Power Tools, Battery Operated Vacuums

 UAV/Drones, Material Handling

 BMS/Storage, Home Automation

MARKING

DIAGRAM

AYWWG

NTBG

MAXIMUM RATINGS (T = 25C unless otherwise noted)

S4D1N15

Parameter

Drain−to−Source Voltage

Symbol

Value

150

Unit

D PAK7

CASE 418AY

DSS

Gate−to−Source Voltage

20

= Assembly Location

= Year

Continuous Drain

Current R

185

WW = Work Week

= Pb−Free Package

Steady

State

(Note 2)

= 25C

Power Dissipation

316

(Note 2)

Continuous Drain

Current R

ORDERING INFORMATION

Steady

State

(Notes 1, 2)

T = 25C

†

Device

Package

Shipping

Power Dissipation

3.7

(Notes 1, 2)

NTBGS4D1N15MC

800 / Tape &

Reel

D PAK7

(Pb−Free)

Pulsed Drain Current

T = 25C, t = 10 ms

2564

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Operating Junction and Storage Temperature

Range

T , T

−55 to

C

stg

+175

Source Current (Body Diode)

263

332

Single Pulse Drain−to−Source Avalanche

Energy (I = 81.5 A , L = 0.1 mH)

Lead Temperature for Soldering Purposes

(1/8 from case for 10 s)

260

C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using a 1 in , 1 oz. Cu pad.

2. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

 Semiconductor Components Industries, LLC, 2019

Publication Order Number:

May, 2023 − Rev. 2

NTBGS4D1N15MC/D

12 3 4 5 6 7

中文翻译

下载PDF

与NTBGS4D1N15MC相关器件

型号	品牌	获取价格	描述	数据表
NTBGS6D5N15MC	ONSEMI	获取价格	Power MOSFET, 150 V, 6.5 mΩ, A, Single N−Cha
NTBL045N065SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TOLL
NTBL048N60S5H	ONSEMI	获取价格	MOSFET - Power, N‐Channel, SUPERFET® V, FAST,
NTBL050N65S3H	ONSEMI	获取价格	MOSFET - Power, N‐Channel, SUPERFET® III, FAS
NTBL060N065SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL
NTBL061N60S5H	ONSEMI	获取价格	MOSFET - Power, N‐Channel, SUPERFET® V, FAST,
NTBL070N65S3	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, Easy
NTBL075N065SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TOLL
NTBL080N60S5H	ONSEMI	获取价格	MOSFET - Power, N‐Channel, SUPERFET® V, FAST,
NTBL082N65S3HF	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FRFET

与NTBGS4D1N15MC相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

10
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

8
SL74HC10N：高性能三输入与非门解析
2024-09-03

90
AIC1781A 电池充电控制器深度解析
2024-09-03

80

产品中心

服务支持

精选活动

关于我们

帮助中心

NTBGS4D1N15MC

NTBGS4D1N15MC 数据手册

与NTBGS4D1N15MC相关器件

与NTBGS4D1N15MC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTBGS4D1N15MC

NTBGS4D1N15MC 数据手册

与NTBGS4D1N15MC相关器件

与NTBGS4D1N15MC相关文章

您还可以找

您在本页遇到什么问题？