5秒后页面跳转
捷配首页

Datasheet > NTBG022N120M3S
NTBG022N120M3S PDF预览

NTBG022N120M3S

更新时间： 2024-09-17 11:15:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 318K
描述
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L

阅读下载

中文翻译

获取价格

NTBG022N120M3S 数据手册

 浏览型号NTBG022N120M3S的Datasheet PDF文件第2页浏览型号NTBG022N120M3S的Datasheet PDF文件第3页浏览型号NTBG022N120M3S的Datasheet PDF文件第4页浏览型号NTBG022N120M3S的Datasheet PDF文件第5页浏览型号NTBG022N120M3S的Datasheet PDF文件第6页浏览型号NTBG022N120M3S的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – EliteSiC,  
22ꢀmohm, 1200ꢀV, M3S,  
D2PAK-7L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
1200 V  
30 mꢀ @ 18 V  
72 A  
Drain (TAB)  
NTBG022N120M3S  
Features  
Gate (Pin 1)  
• Typ. R  
= 22 mꢀ  
• Ultra Low Gate Charge (Q  
DS(on)  
= 142 nC)  
Driver Source (Pin 2)  
Power Source (Pins 3, 4, 5, 6, 7)  
G(tot)  
• High Speed Switching with Low Capacitance (C = 146 pF)  
oss  
• 100% Avalanche Tested  
N−CHANNEL MOSFET  
• These Devices are RoHS Compliant  
Typical Applications  
• Solar Inverters  
• Electric Vehicle Charging Stations  
• Uninterruptible Power Supplies (UPS)  
• Energy Storage Systems  
• Switch Mode Power Supplies (SMPS)  
2
D PAK−7L  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
CASE 418BJ  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
1200  
Unit  
V
V
DSS  
MARKING DIAGRAM  
Gate−to−Source Voltage  
V
GS  
−10/+22  
−3/+18  
V
Recommended Operation Values  
of Gate−to−Source Voltage  
T <175°C  
V
GSop  
V
C
BG022N  
120M3S  
AYWWZZ  
Steady T =25°C  
State  
Continuous Drain  
Current (Notes 2, 3)  
I
D
72  
234  
51  
A
W
A
C
Power Dissipation  
P
I
D
R
(Note 2)  
ꢁ
BG022N120M3S = Specific Device Code  
JC  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
Steady T =100°C  
State  
Continuous Drain Cur-  
rent R (Notes 2, 3)  
C
D
ꢁ
JC  
Power Dissipation R  
(Note 2)  
P
D
117  
171  
W
A
ꢁ
JC  
ZZ  
= Lot Traceability  
Pulsed Drain Current  
(Note 4)  
T
C
= 25°C  
I
DM  
ORDERING INFORMATION  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
A
J
stg  
Device  
Package  
Shipping  
Source Current (Body Diode)  
I
S
53  
2
NTBG022N120M3S  
D PAK−7L  
800 / Tape  
& Reel  
T
C
= 25°C, V = −3 V (Note 2)  
GS  
Single Pulse Drain−to−Source Avalanche  
Energy (I = 23.1 A, L = 1 mH) (Note 5)  
E
267  
270  
mJ  
AS  
L(pk)  
Maximum Temperature for Soldering (10 s)  
T
L
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surface mounted on a FR−4 board using 1 in pad of 2 oz copper.  
2. The entire application environment impacts the thermal resistance values  
shown, they are not constants and are only valid for the particular conditions  
noted.  
3. The maximium current rating is based on typical R  
performance.  
DS(on)  
4. Repetitive rating, limited by max junction temperature.  
5. E of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23.1 A,  
AS  
DD  
J
AS  
V
= 100 V, V = 18 V.  
GS  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
July, 2023 − Rev. 4  
NVBG022N120M3S/D  
 
12345678

中文翻译

下载PDF

与NTBG022N120M3S相关器件

型号 品牌 获取价格 描述 数据表
NTBG025N065SC1 ONSEMI

获取价格

 		Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L
NTBG028N170M1 ONSEMI

获取价格

 		Silicon Carbide (SiC) MOSFET – EliteSiC, 28 m
NTBG030N120M3S ONSEMI

获取价格

 		Silicon Carbide (SiC) MOSFET - EliteSiC, 29 m
NTBG040N120M3S ONSEMI

获取价格

 		Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L
NTBG040N120SC1 ONSEMI

获取价格

 		Silicon Carbide (SiC) MOSFET - EliteSiC, 40 m
NTBG045N065SC1 ONSEMI

获取价格

 		Power Field-Effect Transistor
NTBG060N065SC1 ONSEMI

获取价格

 		Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L
NTBG060N090SC1 ONSEMI

获取价格

 		Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L
NTBG070N120M3S ONSEMI

获取价格

 		Silicon Carbide (SiC) MOSFET - EliteSiC, 65 m
NTBG080N120SC1 ONSEMI

获取价格

 		Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L

与NTBG022N120M3S相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证