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NTBG030N120M3S

更新时间： 2024-11-10 11:13:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 227K
描述
Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, D2PAK-7L

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NTBG030N120M3S 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – EliteSiC,  
29ꢀmohm, 1200ꢀV, M3S,  
D2PAK-7L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
1200 V  
39 mW @ 18 V  
77 A  
Drain (TAB)  
NTBG030N120M3S  
Features  
Gate (Pin 1)  
• Typ. R  
= 29 mW @ V = 18 V  
GS  
DS(on)  
• Ultra Low Gate Charge (Q  
= 107 nC)  
G(tot)  
• High Speed Switching with Low Capacitance (C = 106 pF)  
• 100% Avalanche Tested  
oss  
Driver Source (Pin 2)  
Power Source (Pins 3, 4, 5, 6, 7)  
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
N−CHANNEL MOSFET  
• Solar Inverters  
• Electric Vehicle Charging Stations  
• UPS (Uninterruptible Power Supplies)  
• Energy Storage Systems  
• SMPS (Switch Mode Power Supplies)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
D2PAK−7L  
CASE 418BJ  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
1200  
Unit  
V
V
DSS  
MARKING DIAGRAM  
Gate−to−Source Voltage  
V
GS  
−10/+22  
−3/+18  
V
Recommended Operation Values  
T
< 175°C  
= 25°C  
V
V
C
GSop  
BG030N  
120M3S  
AYWWZZ  
of Gate−to−Source Voltage  
Continuous Drain  
Current (Notes 2, 3)  
Steady  
State  
T
I
D
77  
348  
54  
A
W
A
C
Power Dissipation  
(Note 2)  
P
D
BG030N120M3S = Specific Device Code  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
Continuous Drain  
Current (Notes 2, 3)  
Steady  
State  
T
C
= 100°C  
I
D
Power Dissipation  
(Note 2)  
P
D
174  
207  
W
A
ZZ  
= Lot Traceability  
Pulsed Drain Current  
(Note 4)  
T
C
= 25°C  
I
DM  
ORDERING INFORMATION  
†
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
A
Device  
Package  
Shipping  
J
stg  
+175  
NTBG030N120M3S  
D2PAK−7L  
800 / Tape  
& Reel  
Source Current (Body Diode)  
I
S
68  
T
C
= 25°C, V = −3 V (Note 2)  
GS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Single Pulse Drain−to−Source Avalanche  
Energy (I = 21 A, L = 1 mH) (Note 5)  
E
220  
270  
mJ  
°C  
AS  
L(pk)  
Maximum Temperature for Soldering (10 s)  
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surface mounted on a FR−4 board using1 in pad of 2 oz copper.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
3. The maximum current rating is based on typical RDS(on) performance.  
4. Repetitive rating, limited by max junction temperature.  
5. E of 220 mJ is based on starting T = 25°C; L = 1 mH, I = 21 A,  
AS  
DD  
J
AS  
V
= 100 V, V = 18 V.  
GS  
© Semiconductor Components Industries, LLC, 2022  
1
Publication Order Number:  
March, 2023 − Rev. 0  
NTBG030N120M3S/D  
 
12345678

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