Datasheet > NTBA104GU16

NTBA104GU16

更新时间： 2024-11-06 10:30:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
24页	501K
描述
Dual supply translating transceiver; auto direction sensing; 3-state

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

NTBA104GU16 数据手册

NTBA104

Dual supply translating transceiver; auto direction sensing;

3-state

Rev. 1 — 6 December 2011

Product data sheet

1. General description

The NTBA104 is a 4-bit, dual supply translating transceiver with auto direction sensing,

that enables bidirectional voltage level translation. It features two 4-bit input-output ports

(An and Bn), one output enable input (OE) and two supply pins (V_CC(A)and V_CC(B)). V_CC(A)

can be supplied at any voltage between 1.2 V and 3.6 V and V_CC(B)can be supplied at any

voltage between 1.65 V and 5.5 V, making the device suitable for translating between any

of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V).

Pins An and OE are referenced to V_CC(A)and pins Bn are referenced to V_CC(B). A HIGH

level at pin OE causes the outputs to assume a high-impedance OFF-state. This device is

fully specified for partial power-down applications using I_OFF. The I_OFFcircuitry disables

the output, preventing the damaging backflow current through the device when it is

powered down.

2. Features and benefits

 Wide supply voltage range:

 V_CC(A): 1.2 V to 3.6 V and V_CC(B): 1.65 V to 5.5 V

 I_OFFcircuitry provides partial Power-down mode operation

 Inputs accept voltages up to 5.5 V

 ESD protection:

 HBM JESD22-A114E Class 2 exceeds 2500 V for A port

 HBM JESD22-A114E Class 3B exceeds 15000 V for B port

 MM JESD22-A115-A exceeds 200 V

 CDM JESD22-C101E exceeds 1500 V

 Latch-up performance exceeds 100 mA per JESD 78B Class II

 Multiple package options

 Specified from 40 C to +85 C and 40 C to +125 C

12 3 4 5 6 7...24

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
NTBG014N120M3P	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET – EliteSiC, 14 m
NTBG015N065SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L
NTBG020N090SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L
NTBG020N120SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, D2PAK-7L
NTBG022N120M3S	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
NTBG025N065SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L
NTBG028N170M1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET – EliteSiC, 28 m
NTBG030N120M3S	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 29 m
NTBG040N120M3S	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L
NTBG040N120SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET - EliteSiC, 40 m