Datasheet > NTB70N08L

NTB70N08L

更新时间： 2024-11-04 23:54:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
4页	44K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| TO-263AB

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NTB70N08L 数据手册

NTP70N08, NTB70N08,

NTP70N08L, NTB70N08L

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80 V Power MOSFET

ON Semiconductor utilizes its latest MOSFET technology process

to manufacture 80 V power MOSFET devices to achieve the lowest

possible on–resistance per silicon area. These 80 V devices are

designed for Power Management solutions in 42 V Automotive

system applications. Typical applications include integrated starter

alternator, electronic power steering, electronic fuel injection,

catalytic converter heaters and other high power applications made

possible via an automotive 42 V bus. ON Semiconductor’s latest

technology offering continues to offer high avalanche energy

capability and low reverse recovery losses.

http://onsemi.com

70 AMPERES

70N08 Typ R

= 19 mΩ

DS(on)

70N08L Typ R

= 21 mΩ

DS(on)

ELECTRICAL CHARACTERISTICS

(T = 25°C unless otherwise noted)

Characteristic

Symbol

Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown

Voltage

Vdc

(BR)DSS

= 0 Vdc, I = 250 µAdc)

–

Zero Gate Voltage Drain Current

µAdc

DSS

= 80 Vdc, V

= 0 Vdc)

= 0 Vdc,

–

1.0

T =150°C)

Gate–Body Leakage Current

(V = ±20 Vdc, V = 0 Vdc)

nAdc

Vdc

GSS

TO–220 (XTP)

CASE 221A–09

STYLE 5

–

±100

GS DS

ON CHARACTERISTICS

Gate Threshold Voltage

GS(th)

= V , I = 250 µAdc)

NTP/B70N08

NTP/B70N08L

2.0

1.0

3.0

1.5

4.0

2.0

Static Drain–to–Source

On–Resistance

mΩ

DS(on)

(I = 35 Adc)

D PAK (XTB)

NTP/B70N08, V = 10 V

NTP/B70N08L, V

–

CASE 418B

STYLE 2

= 5 V

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

October, 2000 – Rev. 0

NTP70N08/D

12 3 4

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