Datasheet > NTB6411AN

NTB6411AN

更新时间： 2024-11-14 06:00:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	136K
描述
N-Channel Power MOSFET 100 V, 72 A, 14 mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTB6411AN 数据手册

NTB6411AN, NTP6411AN

N-Channel Power MOSFET

100 V, 72 A, 14 mW

Features

• Low R

DS(on)

• High Current Capability

• 100% Avalanche Tested

• These are Pb−Free Devices

http://onsemi.com

MAX

(Note 1)

(BR)DSS

DS(ON)

MAXIMUM RATINGS (T = 25°C Unless otherwise specified)

100 V

14 mW @ 10 V

72 A

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Symbol

Value

100

$20

Unit

DSS

N−Channel

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

Power Dissipation

Steady

State

188

Pulsed Drain Current

t = 10 ms

285

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

470

Energy (V = 50 Vdc, V = 10 Vdc, I =

L(pk)

56 A, L = 0.3 mH, R = 25 W)

Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

260

°C

TO−220AB

D PAK

CASE 221A

STYLE 5

CASE 418B

STYLE 2

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

0.8

Unit

Junction−to−Case (Drain) Steady State

Junction−to−Ambient (Note 1)

°C/W

MARKING DIAGRAM

& PIN ASSIGNMENT

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,

Drain

NTB

6411ANG

AYWW

(Cu Area 1.127 sq in [2 oz] including traces).

NTP

6411ANG

AYWW

Gate

Drain

Source

6411AN = Specific Device Code

Drain

= Pb−Free Device

= Assembly Location

= Year

WW = Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Publication Order Number:

October, 2009 − Rev. 0

NTB6411AN/D

12 3 4 5 6 7

中文翻译

下载PDF

与NTB6411AN相关器件

型号	品牌	获取价格	描述	数据表
NTB6411ANG	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 72 A, 14 mΩ
NTB6411ANT4G	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 72 A, 14 mΩ
NTB6412AN	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ
NTB6412AN_12	ONSEMI	获取价格	N-Channel Power MOSFET
NTB6412ANG	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ
NTB6412ANT4G	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ
NTB6413AN	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 42 A, 28 mΩ
NTB6413AN_12	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 42 A, 28 m
NTB6413ANG	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 42 A, 28 mΩ
NTB6413ANT4G	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 42 A, 28 mΩ