Datasheet > NTB6410AN

NTB6410AN

更新时间： 2024-09-13 06:00:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	141K
描述
N-Channel Power MOSFET 100 V, 76 A, 13 mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTB6410AN 数据手册

NTB6410AN, NTP6410AN

N-Channel Power MOSFET

100 V, 76 A, 13 mW

Features

• Low R

DS(on)

• High Current Capability

• 100% Avalanche Tested

• These are Pb−Free Devices

http://onsemi.com

MAX

DS(ON)

(Note 1)

(BR)DSS

MAXIMUM RATINGS (T = 25°C Unless otherwise specified)

100 V

13 mW @ 10 V

76 A

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Symbol

Value

100

$20

Unit

DSS

N−Channel

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

Power Dissipation

Steady

State

188

Pulsed Drain Current

t = 10 ms

305

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

500

Energy (V = 50 Vdc, V = 10 Vdc,

= 57.7 A, L = 0.3 mH, R = 25 W)

L(pk)

Lead Temperature for Soldering

260

°C

TO−220AB

CASE 221A

STYLE 5

D PAK

Purposes, 1/8″ from Case for 10 Seconds

CASE 418B

STYLE 2

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

0.8

Unit

MARKING DIAGRAM

& PIN ASSIGNMENT

Junction−to−Case (Drain) Steady State

Junction−to−Ambient (Note 1)

°C/W

Drain

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 sq in pad size,

Drain

NTB

6410ANG

AYWW

NTP

(Cu Area 1.127 sq in [2 oz] including traces).

6410ANG

AYWW

Gate

Drain

Source

6410AN = Specific Device Code

Drain

= Pb−Free Device

= Assembly Location

= Year

WW = Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Publication Order Number:

December, 2009 − Rev. 0

NTB6410AN/D

12 3 4 5 6 7

中文翻译

下载PDF

与NTB6410AN相关器件

型号	品牌	获取价格	描述	数据表
NTB6410ANG	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
NTB6410ANT4G	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
NTB6411AN	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 72 A, 14 mΩ
NTB6411ANG	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 72 A, 14 mΩ
NTB6411ANT4G	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 72 A, 14 mΩ
NTB6412AN	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ
NTB6412AN_12	ONSEMI	获取价格	N-Channel Power MOSFET
NTB6412ANG	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ
NTB6412ANT4G	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ
NTB6413AN	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 42 A, 28 mΩ