NTB60N06

更新时间： 2024-11-13 22:28:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	89K
描述
60 V, 60 A, N−Channel TO−220 and D2PAK

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

NTB60N06 数据手册

NTP60N06, NTB60N06

Power MOSFET

60 V, 60 A, N−Channel

TO−220 and D²PAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

60 VOLTS, 60 AMPERES

Features

R_DS(on)= 14 mW

• Pb−Free Packages are Available

N−Channel

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING

DIAGRAMS

Rating

Symbol Value

Unit

Vdc

Drain−to−Source Voltage

DSS

DGR

Drain

Drain−to−Gate Voltage (R = 10 MW)

Gate−to−Source Voltage

− Continuous

"20

"30

− Non−Repetitive (t v10 ms)

TO−220

CASE 221A

STYLE 5

NTx60N06

Drain Current

− Continuous @ T = 25°C

AYWW

42.3

180

Adc

Apk

− Continuous @ T = 100°C

− Single Pulse (t v10 ms)

Gate

Total Power Dissipation @ T = 25°C

Derate above 25°C

150

1.0

2.4

W/°C

Source

Total Power Dissipation @ T = 25°C (Note 1)

Drain

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

T , T

−55 to

+175

°C

stg

Drain

454

Energy − Starting T = 25°C

D PAK

NTx60N06

AYWW

(V = 75 Vdc, V = 10 Vdc, L = 0.3 mH

CASE 418B

STYLE 2

= 55 A, V = 60 Vdc)

L(pk)

Thermal Resistance

− Junction−to−Case

°C/W

°C

1.0

62.5

Gate

− Junction−to−Ambient (Note 1)

Drain

Source

Maximum Lead Temperature for Soldering

260

Purposes, 1/8″ from case for 10 seconds

NTx60N06 = Device Code

= P or B

= Assembly Location

= Year

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

= Work Week

1. When surface mounted to an FR4 board using minimum recommended pad

ORDERING INFORMATION

See detailed ordering and shipping information in the package

size, (Cu Area 0.412 in ).

dimensions section on page 7 of this data sheet.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

October, 2004 − Rev. 3

NTP60N06/D

12 3 4 5 6 7...10

中文翻译

下载PDF

NTB60N06 替代型号

型号	品牌	替代类型	描述	数据表
NVB60N06T4G	ONSEMI	完全替代	Power MOSFET 60 V, 60 A, NâChannel D2PAK
NTB60N06LT4G	ONSEMI	类似代替	Power MOSFET 60 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK
NTB60N06T4G	ONSEMI	类似代替	60 V, 60 A, N−Channel TO−220 and D2PAK

与NTB60N06相关器件

型号	品牌	获取价格	描述	数据表
NTB60N06G	ONSEMI	获取价格	60 V, 60 A, N−Channel TO−220 and D2PAK
NTB60N06L	ONSEMI	获取价格	Power MOSFET 60 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK
NTB60N06LG	ONSEMI	获取价格	Power MOSFET 60 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK
NTB60N06LT4	ONSEMI	获取价格	Power MOSFET 60 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK
NTB60N06LT4G	ONSEMI	获取价格	Power MOSFET 60 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK
NTB60N06T4	ONSEMI	获取价格	60 V, 60 A, N−Channel TO−220 and D2PAK
NTB60N06T4G	ONSEMI	获取价格	60 V, 60 A, N−Channel TO−220 and D2PAK
NTB6410AN	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
NTB6410ANG	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
NTB6410ANT4G	ONSEMI	获取价格	N-Channel Power MOSFET 100 V, 76 A, 13 mΩ

与NTB60N06相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

5
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

2
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

NTB60N06

NTB60N06 数据手册

NTB60N06 替代型号

与NTB60N06相关器件

与NTB60N06相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTB60N06

NTB60N06 数据手册

NTB60N06 替代型号

与NTB60N06相关器件

与NTB60N06相关文章

您还可以找

您在本页遇到什么问题？