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NTB5860N

更新时间： 2024-09-13 12:22:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 123K
描述
N-Channel Power MOSFET

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NTB5860N 数据手册

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NTB5860N, NTP5860N,  
NVB5860N  
N-Channel Power MOSFET  
60 V, 220 A, 3.0 mW  
Features  
http://onsemi.com  
• Low R  
DS(on)  
• High Current Capability  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• 100% Avalanche Tested  
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant  
60 V  
3.0 mW @ 10 V  
220 A  
• NVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
D
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)  
J
G
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage − Continuous  
Symbol  
Value  
60  
Unit  
V
V
DSS  
S
N−CHANNEL MOSFET  
V
GS  
$20  
220  
156  
283  
V
4
Continuous Drain  
Current, R  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
D
A
C
q
JC  
T
C
4
Power Dissipation,  
R
Steady  
State  
T
C
P
D
W
q
JC  
1
2
Pulsed Drain Current  
t = 10 ms  
p
I
660  
130  
A
A
DM  
3
2
Current Limited by Package  
I
DMmax  
TO−220AB  
D PAK  
CASE 221A  
STYLE 5  
CASE 418B  
STYLE 2  
1
Operating and Storage Temperature Range  
T , T  
−55 to  
+175  
°C  
J
stg  
2
3
Source Current (Body Diode)  
I
130  
735  
A
S
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Single Pulse Drain−to−Source Avalanche  
Energy (L = 0.3 mH)  
E
AS  
mJ  
4
4
Drain  
Lead Temperature for Soldering  
Purposes (1/8″ from Case for 10 Seconds)  
T
260  
°C  
L
Drain  
THERMAL RESISTANCE RATINGS  
Parameter  
NTB  
5860NG  
AYWW  
Symbol  
Max  
0.53  
28  
Unit  
NTP  
5860NG  
AYWW  
Junction−to−Case (Drain) Steady State  
Junction−to−Ambient − Steady State (Note 1)  
R
°C/W  
q
JC  
R
2
q
JA  
1
Gate  
3
1
Gate  
3
Drain  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface mounted on FR4 board using 1 sq in pad size,  
Source  
Source  
2
Drain  
G
A
Y
= Pb−Free Device  
= Assembly Location*  
= Year  
(Cu Area 1.127 sq in [2 oz] including traces).  
WW = Work Week  
*Could be one or two digit alpha or numeric code  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 2  
NTB5860N/D  
 
1234567

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