5秒后页面跳转
NSVMMBTH10LT1G PDF预览

NSVMMBTH10LT1G

更新时间: 2024-01-28 00:10:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 97K
描述
VHF/UHF Transistor

NSVMMBTH10LT1G 数据手册

 浏览型号NSVMMBTH10LT1G的Datasheet PDF文件第2页浏览型号NSVMMBTH10LT1G的Datasheet PDF文件第3页浏览型号NSVMMBTH10LT1G的Datasheet PDF文件第4页浏览型号NSVMMBTH10LT1G的Datasheet PDF文件第5页 
MMBTH10L,  
MMBTH10-4L,  
SMMBTH10-4L,  
NSVMMBTH10L  
VHF/UHF Transistor  
www.onsemi.com  
NPN Silicon  
Features  
S and NSV Prefixes for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC−Q101 Qualified and PPAP Capable  
SOT−23 (TO−236)  
CASE 318  
STYLE 6  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
COLLECTOR  
3
Compliant  
1
BASE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
25  
Unit  
Vdc  
Vdc  
Vdc  
2
EMITTER  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
30  
MARKING DIAGRAMS  
3.0  
THERMAL CHARACTERISTICS  
Characteristic  
3EM MG  
3E4 MG  
Symbol  
Max  
Unit  
G
G
Total Device Dissipation  
FR−5 Board (Note 1)  
P
D
MMBTH10LT1G,  
NSVMMBTH10LT1G  
MMBTH10−04LT1G  
T = 25°C  
Derate above 25°C  
225  
1.8  
mW  
mW/°C  
A
Thermal Resistance,  
Junction to Ambient (Note 1)  
R
556  
°C/W  
3EM, 3E4= Specific Device Code  
θ
JA  
M
G
= Date Code*  
= Pb−Free Package  
Total Device Dissipation  
Alumina Substrate (Note 2)  
P
D
(Note: Microdot may be in either location)  
T = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
A
Thermal Resistance,  
Junction to Ambient (Note 2)  
R
417  
°C/W  
θ
JA  
ORDERING INFORMATION  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
Device  
Package  
Shipping  
J
stg  
MMBTH10LT1G  
SOT−23  
3,000 /  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
(Pb−Free) Tape & Reel  
NSVMMBTH10LT1G  
MMBTH10−4LT1G  
SOT−23 3,000 /  
(Pb−Free) Tape & Reel  
SOT−23 3,000 /  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina  
(Pb−Free) Tape & Reel  
MMBTH10LT3G,  
SOT−23 10,000 /  
SMMBTH10−4LT3G  
(Pb−Free) Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 1994  
1
Publication Order Number:  
October, 2016 − Rev. 6  
MMBTH10LT1/D  
 

NSVMMBTH10LT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBTH10-7 DIODES

功能相似

NPN SURFACE MOUNT VHF/UHF TRANSISTOR

与NSVMMBTH10LT1G相关器件

型号 品牌 获取价格 描述 数据表
NSVMMBTH81LT1G ONSEMI

获取价格

50 mA, 20 V PNP RF Bipolar Junction Transistor
NSVMMBTH81LT3G ONSEMI

获取价格

50 mA, 20 V PNP RF Bipolar Junction Transistor
NSVMMUN2112LT1G ONSEMI

获取价格

PNP Bipolar Digital Transistor (BRT)
NSVMMUN2113LT3G ONSEMI

获取价格

PNP 双极数字晶体管 (BRT)
NSVMMUN2114LT3G ONSEMI

获取价格

PNP 双极数字晶体管 (BRT)
NSVMMUN2130LT1G ONSEMI

获取价格

PNP Bipolar Digital Transistor (BRT)
NSVMMUN2131LT1G ONSEMI

获取价格

PNP 双极数字晶体管 (BRT)
NSVMMUN2132LT1G ONSEMI

获取价格

Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k
NSVMMUN2133LT1G ONSEMI

获取价格

PNP 双极数字晶体管 (BRT)
NSVMMUN2135LT1G ONSEMI

获取价格

PNP Bipolar Digital Transistor (BRT)