是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 6 weeks | 风险等级: | 1.53 |
其他特性: | BUILT IN BIAS RESISTANCE RATIO IS 10 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NSVMMUN2135LT1G | ONSEMI |
获取价格 |
PNP Bipolar Digital Transistor (BRT) | |
NSVMMUN2136LT1G | ONSEMI |
获取价格 |
PNP 双极数字晶体管 (BRT) | |
NSVMMUN2137LT1G | ONSEMI |
获取价格 |
PNP Bipolar Digital Transistor (BRT) | |
NSVMMUN2212LT1G | ONSEMI |
获取价格 |
NPN Transistors with Monolithic Bias Resistor Network | |
NSVMMUN2217L | ONSEMI |
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Digital Transistors (BRT) | |
NSVMMUN2217LT1G | ONSEMI |
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Digital Transistors (BRT) | |
NSVMMUN2230LT1G | ONSEMI |
获取价格 |
NPN 双极数字晶体管 (BRT) | |
NSVMMUN2231LT1G | ONSEMI |
获取价格 |
NPN Bipolar Digital Transistor (BRT) | |
NSVMMUN2232LT1G | ONSEMI |
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Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k | |
NSVMMUN2232LT3G | ONSEMI |
获取价格 |
NPN 双极数字晶体管 (BRT) |