是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 4 weeks |
风险等级: | 5.75 | 其他特性: | BUILT IN BIAS RESISTANCE RATIO IS 1 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 8 |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NSVMMUN2132LT1G | ONSEMI |
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Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k | |
NSVMMUN2133LT1G | ONSEMI |
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PNP 双极数字晶体管 (BRT) | |
NSVMMUN2135LT1G | ONSEMI |
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PNP Bipolar Digital Transistor (BRT) | |
NSVMMUN2136LT1G | ONSEMI |
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PNP 双极数字晶体管 (BRT) | |
NSVMMUN2137LT1G | ONSEMI |
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PNP Bipolar Digital Transistor (BRT) | |
NSVMMUN2212LT1G | ONSEMI |
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NPN Transistors with Monolithic Bias Resistor Network | |
NSVMMUN2217L | ONSEMI |
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Digital Transistors (BRT) | |
NSVMMUN2217LT1G | ONSEMI |
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Digital Transistors (BRT) | |
NSVMMUN2230LT1G | ONSEMI |
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NPN 双极数字晶体管 (BRT) | |
NSVMMUN2231LT1G | ONSEMI |
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NPN Bipolar Digital Transistor (BRT) |