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NSVMMBTH81LT1G PDF预览

NSVMMBTH81LT1G

更新时间: 2024-12-01 11:13:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 210K
描述
50 mA, 20 V PNP RF Bipolar Junction Transistor

NSVMMBTH81LT1G 数据手册

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DATA SHEET  
www.onsemi.com  
PNP RF Transistor  
MMBTH81  
COLLECTOR  
3
1
This device is designed for general RF amplifier and mixer  
applications to 250 MHz with collector currents in the 1.0 mA to  
30 mA range. Sourced from Process 75.  
BASE  
2
EMITTER  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
3
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements;  
AECQ101 Qualified and PPAP Capable  
1
2
SOT23  
CASE 31808  
STYLE 6  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
Units  
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
20  
V
MARKING DIAGRAM  
CollectorBase Voltage  
EmitterBase Voltage  
20  
3.0  
V
V
3D M  
Collector Current Continuous  
I
50  
mA  
°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
1
J
stg  
3D = Specific Device Code  
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
M
= Date Code*  
A
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
225  
1.8  
mW  
mW/°C  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
R
556  
°C/W  
q
JA  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. Device mounted on FR4 PCB 1.6 × 1.6 × 0.06 in.  
2. These ratings are based on a maximum junction temperature of 150°C.  
3. These are steady state limits. The factory should be consulted on applications  
involving pulsed or low duty cycle operations.  
4. All voltages (V) and currents (A) are negative polarity for PNP transistors.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
June, 2022 Rev. 1  
MMBTH81/D  

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