DATA SHEET
www.onsemi.com
PNP RF Transistor
MMBTH81
COLLECTOR
3
1
This device is designed for general RF amplifier and mixer
applications to 250 MHz with collector currents in the 1.0 mA to
30 mA range. Sourced from Process 75.
BASE
2
EMITTER
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
3
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
1
2
SOT−23
CASE 318−08
STYLE 6
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Symbol
Value
Units
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
20
V
MARKING DIAGRAM
Collector−Base Voltage
Emitter−Base Voltage
20
3.0
V
V
3D M
Collector Current − Continuous
I
50
mA
°C
C
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
1
J
stg
3D = Specific Device Code
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
M
= Date Code*
A
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
D
225
1.8
mW
mW/°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
R
556
°C/W
q
JA
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1. Device mounted on FR−4 PCB 1.6 × 1.6 × 0.06 in.
2. These ratings are based on a maximum junction temperature of 150°C.
3. These are steady state limits. The factory should be consulted on applications
involving pulsed or low duty cycle operations.
4. All voltages (V) and currents (A) are negative polarity for PNP transistors.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
June, 2022 − Rev. 1
MMBTH81/D