5秒后页面跳转
NSVMMBT6520L PDF预览

NSVMMBT6520L

更新时间: 2024-11-01 01:18:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 141K
描述
High Voltage Transistor

NSVMMBT6520L 数据手册

 浏览型号NSVMMBT6520L的Datasheet PDF文件第2页浏览型号NSVMMBT6520L的Datasheet PDF文件第3页浏览型号NSVMMBT6520L的Datasheet PDF文件第4页浏览型号NSVMMBT6520L的Datasheet PDF文件第5页 
MMBT6520L,  
NSVMMBT6520L  
High Voltage Transistor  
PNP Silicon  
www.onsemi.com  
Features  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
COLLECTOR  
3
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
1
BASE  
Compliant  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
V
V
V
−350  
Vdc  
CEO  
3
SOT−23 (TO−236)  
CollectorBase Voltage  
EmitterBase Voltage  
Base Current  
−350  
−5.0  
Vdc  
Vdc  
CBO  
EBO  
CASE 318  
STYLE 6  
1
2
I
B
−250  
−500  
mA  
Collector Current − Continuous  
I
C
mAdc  
THERMAL CHARACTERISTICS  
MARKING DIAGRAM  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR−5 Board,  
P
D
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
2Z M G  
A
Derate above 25°C  
G
1
Thermal Resistance, Junction−to−Ambient  
R
556  
°C/W  
q
JA  
Total Device Dissipation Alumina  
P
D
2Z = Device Code  
Substrate, (Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
M
= Date Code*  
Derate above 25°C  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
T , T  
J
−55 to +150  
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT6520LT1G  
SOT−23  
(Pb−Free)  
3000 / Tape &  
Reel  
MMBT6520LT3G  
SOT−23  
(Pb−Free)  
10,000 / Tape &  
Reel  
NSVMMBT6520LT1G SOT−23  
(Pb−Free)  
3,000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 1994  
1
Publication Order Number:  
October, 2016 − Rev. 7  
MMBT6520LT1/D  
 

与NSVMMBT6520L相关器件

型号 品牌 获取价格 描述 数据表
NSVMMBT6520LT1G ONSEMI

获取价格

High Voltage Transistor
NSVMMBTA05LT1G ONSEMI

获取价格

NPN 双极晶体管
NSVMMBTA28LT1G ONSEMI

获取价格

NPN 达林顿晶体管
NSVMMBTH10L ONSEMI

获取价格

VHF/UHF Transistor
NSVMMBTH10LT1G ONSEMI

获取价格

VHF/UHF Transistor
NSVMMBTH81LT1G ONSEMI

获取价格

50 mA, 20 V PNP RF Bipolar Junction Transistor
NSVMMBTH81LT3G ONSEMI

获取价格

50 mA, 20 V PNP RF Bipolar Junction Transistor
NSVMMUN2112LT1G ONSEMI

获取价格

PNP Bipolar Digital Transistor (BRT)
NSVMMUN2113LT3G ONSEMI

获取价格

PNP 双极数字晶体管 (BRT)
NSVMMUN2114LT3G ONSEMI

获取价格

PNP 双极数字晶体管 (BRT)