MMBT6520L,
NSVMMBT6520L
High Voltage Transistor
PNP Silicon
www.onsemi.com
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
BASE
Compliant
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
V
V
−350
Vdc
CEO
3
SOT−23 (TO−236)
Collector−Base Voltage
Emitter−Base Voltage
Base Current
−350
−5.0
Vdc
Vdc
CBO
EBO
CASE 318
STYLE 6
1
2
I
B
−250
−500
mA
Collector Current − Continuous
I
C
mAdc
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
2Z M G
A
Derate above 25°C
G
1
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
JA
Total Device Dissipation Alumina
P
D
2Z = Device Code
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
M
= Date Code*
Derate above 25°C
G
= Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
T , T
J
−55 to +150
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT6520LT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
MMBT6520LT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
NSVMMBT6520LT1G SOT−23
(Pb−Free)
3,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 7
MMBT6520LT1/D