MMBTA05L, MMBTA06L,
SMMBTA06L
Driver Transistors
NPN Silicon
http://onsemi.com
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
COLLECTOR
3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
1
Compliant
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
3
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
MMBTA05LT1
60
80
1
MMBTA06LT1, SMMBTA06LT1
2
Collector−Base Voltage
MMBTA05LT1
Vdc
SOT−23
CASE 318
STYLE 6
60
80
MMBTA06LT1, SMMBTA06LT1
Emitter−Base Voltage
4.0
Vdc
Collector Current − Continuous
Electrostatic Discharge
I
500
mAdc
C
MARKING DIAGRAMS
ESD
HBM Class 3B
MM Class C
CDM Class IV
1H M G
1GM M G
THERMAL CHARACTERISTICS
Characteristic
G
G
Symbol
Max
Unit
Total Device Dissipation FR−5
P
225
mW
D
MMBTA05LT1
MMBTA06LT1,
SMMBTA06L
Board (Note 1) T = 25°C
A
Derate above 25°C
1.8
mW/°C
°C/W
1H, 1GM = Specific Device Code
Thermal Resistance,
Junction−to−Ambient
R
556
M
G
= Date Code*
= Pb−Free Package
q
JA
(Note: Microdot may be in either location)
Total Device Dissipation Alumina
P
D
300
mW
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Substrate, (Note 2) T = 25°C
Derate above 25°C
A
2.4
mW/°C
°C/W
Thermal Resistance,
R
417
q
JA
Junction−to−Ambient
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Junction and Storage Temperature
T , T
−55 to +150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 8
MMBTA05LT1/D