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NSVMMBTA05LT1G PDF预览

NSVMMBTA05LT1G

更新时间: 2024-11-02 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 小信号双极晶体管
页数 文件大小 规格书
6页 114K
描述
NPN 双极晶体管

NSVMMBTA05LT1G 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantFactory Lead Time:4 weeks
风险等级:5.7Base Number Matches:1

NSVMMBTA05LT1G 数据手册

 浏览型号NSVMMBTA05LT1G的Datasheet PDF文件第2页浏览型号NSVMMBTA05LT1G的Datasheet PDF文件第3页浏览型号NSVMMBTA05LT1G的Datasheet PDF文件第4页浏览型号NSVMMBTA05LT1G的Datasheet PDF文件第5页浏览型号NSVMMBTA05LT1G的Datasheet PDF文件第6页 
MMBTA05L, MMBTA06L,  
SMMBTA06L  
Driver Transistors  
NPN Silicon  
http://onsemi.com  
Features  
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AECQ101 Qualified and  
PPAP Capable  
COLLECTOR  
3
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
1
Compliant  
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
3
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
MMBTA05LT1  
60  
80  
1
MMBTA06LT1, SMMBTA06LT1  
2
CollectorBase Voltage  
MMBTA05LT1  
Vdc  
SOT23  
CASE 318  
STYLE 6  
60  
80  
MMBTA06LT1, SMMBTA06LT1  
EmitterBase Voltage  
4.0  
Vdc  
Collector Current Continuous  
Electrostatic Discharge  
I
500  
mAdc  
C
MARKING DIAGRAMS  
ESD  
HBM Class 3B  
MM Class C  
CDM Class IV  
1H M G  
1GM M G  
THERMAL CHARACTERISTICS  
Characteristic  
G
G
Symbol  
Max  
Unit  
Total Device Dissipation FR5  
P
225  
mW  
D
MMBTA05LT1  
MMBTA06LT1,  
SMMBTA06L  
Board (Note 1) T = 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
1H, 1GM = Specific Device Code  
Thermal Resistance,  
JunctiontoAmbient  
R
556  
M
G
= Date Code*  
= PbFree Package  
q
JA  
(Note: Microdot may be in either location)  
Total Device Dissipation Alumina  
P
D
300  
mW  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Substrate, (Note 2) T = 25°C  
Derate above 25°C  
A
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
R
417  
q
JA  
JunctiontoAmbient  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Junction and Storage Temperature  
T , T  
55 to +150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
July, 2012 Rev. 8  
MMBTA05LT1/D  
 

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